Shot noise — the series
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The floor a current sets
A resistor's noise contains no current and a current's noise contains no resistance, and the two are equal when the direct voltage across the thing carrying the current is 2kT/q — 50.0 millivolts at 290 kelvin, whatever the resistance and whatever the current. It is the only boundary in this collection whose axis is a direct voltage across an element. And a forward-biased junction, which has the same dynamic resistance as some resistor, produces exactly half its noise power at every current.
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The junction that is a resistor at zero volts
A forward-biased junction makes half the noise power of a resistor of its own dynamic resistance, and that half is a limit rather than a value. Kept with the saturation current that flows backwards across it, the ratio is one exactly at zero volts, 0.5676 at 50 millivolts, and within one per cent of the half only above 115.1 — at ninety-nine saturation currents, which is a picoampere on a small silicon diode and a microampere on a leaky one. A photodiode held at zero volts has the Johnson noise of its shunt resistance and nothing else, and it becomes shot-noise-limited at 49.981 millivolts of photocurrent drop.
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The resistor in the same loop
A resistor's noise and a junction's are equal as bare densities at 49.98 millivolts of drop, and a junction in series with the resistor that carries its current is the arrangement every current source is built from. In one loop each noise current has to cross the other element, so the two supply equal shares at 12.50 millivolts, a quarter of the crossing; at the crossing itself the resistor supplies 80 per cent and the loop is 2.553 decibels below both floors, which is further than it gets anywhere else. The same resistor multiplies the stage's input-referred noise by five.
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The two generators that are one current
An amplifier's noise is two generators, a voltage in series with its input and a current across it, and the essays on its noise figure treat them as independent numbers. In a bipolar input stage they are one current's shot noise divided two ways, by the collector and the base, and their product is 2kT/√β at every collector current: 0.8008 nV·pA per hertz at a current gain of a hundred, from a microampere to ten milliamps. The best noise figure, 0.4139 dB, does not depend on the bias. The bias decides only where the best source is, and 50 ohms of base resistance decides what the best actually is below 500.
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The count under the density
Shot noise's density, 2qI, is exact at every current, because it is the variance of a count of independent carriers, and that count is Poisson at any size. Reading that variance as a Gaussian floor is not exact. A picoampere in a 10 kHz noise bandwidth is 312 carriers a window, and it passes five standard deviations above its mean 2.74 times as often as a Gaussian of the same variance says. At 10 femtoamperes it is 359 times as often, and 4.4 per cent of the windows are empty. A single pole reads a third more skewness than a count does, (4/3)/√N against 1/√N. The density is right and the shape is wrong, and the shape is what a threshold uses.
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The window a field-effect input wins in
A bipolar input's two noise generators are one current's shot noise split two ways, so their product, and with it the best noise figure, is fixed at 1 + 1/√β, 0.414 dB at a gain of a hundred, whatever the bias. A field-effect input's are two unrelated things. Its voltage noise is its channel's and its current noise is the shot noise of its gate leakage, so their product is a design variable: 0.0007 dB at a milliampere of drain and a picoampere of leakage. Against a bipolar input biased for each source, the field-effect input wins in a window of source resistance with two ends in closed form, from 2.83 kΩ, set by the two inputs' noise resistances, up to 5 GΩ, set by the gate leakage. A nanoampere of leakage brings the top down to 5 MΩ, and 438 nA closes the window.
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The window that closes from the top
A field-effect input beats a bipolar one biased for each source between 2.83 kΩ and 5.14 GΩ at 25 °C, and the top of that window is twice the thermal voltage over √β times the transistor's gate leakage: it falls as fast as the input junction leaks. Carried through the junction's own law, the ceiling is 39.5 GΩ at 0 °C, 913 MΩ at 50 and 5.79 MΩ at 150 — while the floor does not move from 2.83 kΩ until 200 °C. A 1 GΩ sensor leaves the window at 48.6 °C, a 10 GΩ one at 16.4, about 33 kelvin a decade. The leakage's doubling interval is not ten kelvin but 7.5 at 0 °C and 15.0 at 150, so the rule of thumb is right at one temperature only.