Circuit Response
every model has an edge, and the figure carries it
Concept

Stored charge — where it appears

The minority-carrier charge a conducting junction holds, equal to the carrier lifetime times the forward current. It has to be removed before the junction can block, which is what makes a diode's turn-off a current rather than an instant.

Named by 3 essays across one field — each of them below, with the objects they name alongside it.

The reverse peak reaches the forward current at 12.6 A/µs. computed by solving, not by drawing. The peak current a diode conducts backwards while its stored charge is removed, against the rate the external circuit drives its current down. The charge equation is integrated in closed form and marched trapezoidally, and the two agree to a part in a thousand. Drawn over it are the two expressions that describe the limits: √(2·IF·a·τ), which is what a reference gives and which is 16.7% high at this slope, and aτ, which contains no forward current at all and is what the peak approaches when the ramp is slow. At 100 A/µs the junction goes on conducting for 48.3 ns and reaches 3.83 A backwards — 3.83 times the current it was carrying forwards — and the two are equal at 12.6 A/µs.

The diode that conducts backwards

Every diode in this collection is an instantaneous function of its own voltage, which is exact for an operating point and has no time in it at all. A conducting junction holds a charge, and until that charge is gone it cannot block: drive its current down at a hundred amperes a microsecond and it conducts 3.83 amperes backwards for 48 nanoseconds, against the one ampere it was carrying forwards. The expression every reference gives for that peak is 17 per cent high there, and is right to a per cent only above sixteen thousand amperes a microsecond.

transients · Reverse recovery Nine tenths of the heat is in the switch, and above 1.28 MHz there is no temperature at all. computed by solving, not by drawing. The junction temperature a recovering diode settles at, against switching frequency, with the carrier lifetime rising as the 1.8 power of absolute temperature so that the recovery gets worse as the junction gets hotter. Each event costs 15.43 µJ when cold, of which 90% is dissipated in whatever is pulling the current down rather than in the diode: while the junction is still conducting it holds almost no voltage, and the recovered charge is delivered through the switch at the full 100 V. That energy equals the diode's own conduction loss at 29.2 kHz. The fixed point T = Ta + Rth·P(T) is iterated from the ambient upward; the junction passes its rated 150 °C at 904 kHz, and above 1.28 MHz there is no temperature that satisfies it at all — the loop has gain and the solver reports the refusal rather than the last iterate.

The heat a recovery leaves behind

The essay below this one measured how much current a diode conducts backwards and for how long, and stopped there. Both numbers are multiplied by a voltage somewhere, and the surprise is where: while the junction is still conducting it holds almost nothing, so nine tenths of the energy is dissipated in the transistor pulling the current down and not in the diode. Repeat it a hundred thousand times a second and it is 1.5 watts, the lifetime rises with temperature, and above 1.28 megahertz the diode's own loop has no fixed point at all.

transients · Reverse recovery At 1.00 A forward the silicon-carbide Schottky hands the switch more charge than the silicon PN diode above 245 V. computed by solving, not by drawing. The charge each diode returns through the switch when it is forced to block, against the reverse voltage, at 1.00 A forward and 100 A/µs. The silicon-carbide Schottky's is its depletion capacitance charged to the rail, closed form checked against Simpson's rule: 11.8 nC at 100 V, 25.0 nC at 400 V, 30.9 nC at 600 V, the same at any current. The ultrafast silicon diode's is its stored minority charge, 18.1 nC at this current from the recovery's closed form, plus 1.59 nC of its own capacitance at 400 V. The two are equal at 245.3 V.

The recovery a Schottky does have

A Schottky diode stores no minority charge and is quoted as having no reverse recovery. It has a depletion capacitance instead, and to block it must be charged to the rail through the switch: a 650 V silicon-carbide part holds 25.0 nC at 400 V whatever current it was carrying. An ultrafast silicon diode with a 20 ns lifetime returns 19.7 nC at 1 A, so below 1.42 A forward the diode said to have no recovery hands the switch more charge, and at 125 °C the boundary falls to 632 mA. In energy the capacitive charge costs 64.9 per cent of V·Q rather than all of it, and the boundary is 799 mA.

transients · Reverse recovery

Named alongside it

The objects these essays reach for when they reach for this one.

Carrier lifetimeReverse recoverySwitching lossDesign tradeoffTemperature coefficientAsymptotic approximationBisectionClosed formEnergy-storageModel rangeModel refusalSurge impedance

All concepts