Circuit Response
every model has an edge, and the figure carries it
Concept

Temperature coefficient — where it appears

The fractional change in a component's value per kelvin, which is systematic rather than random and therefore does not average away. A matched pair cancels the first-order part of it exactly and leaves the offset divided by the absolute temperature, whatever the mismatch.

Named by 31 essays across 11 fields — each of them below, with the objects they name alongside it.

A diode's drop from 250 to 400 K, at 1.00 mA. computed by solving, not by drawing. Thirty-one operating points, each Newton's method on the exponential at its own temperature. The drop falls at 1.828 mV/K measured against 1.830 mV/K from the closed form — falls, although the thermal voltage in the exponent rises, because the saturation current rises faster. Over the same range the slope per decade of current goes the other way, from 49.6 mV to 79.4 mV, because that one is Vₜ ln 10 and nothing else.

Two millivolts a kelvin, and the wrong sign

Every number in the semiconductor field was computed at 300 K, and the model had no temperature in it at all. Putting it in moves a diode's drop by 1.828 mV/K — downwards, although the thermal voltage in the exponent is rising, because the saturation current rises by nine orders of magnitude across the same range. Two temperature dependences of one device, of opposite sign, from one solve.

semiconductors · Temperature What a 5% mismatched pair leaves behind, across 150 K. computed by solving, not by drawing. A saturation-current mismatch of 5.0% appears as an input offset of Vₜ·ln(m) — 1.2613 mV at 300 K — which is proportional to absolute temperature and therefore drifts at 4.2044 µV/K, exactly the offset divided by the temperature. That is 3333 ppm per kelvin at every mismatch on the slider, because the ratio is 1/T and contains nothing about the device. One junction on its own drifts 1.828 mV/K, 435 times harder.

What matching does about temperature

A pair cancels the 1.8 mV/K that broke the previous essay, and what it leaves behind is exact: a saturation-current mismatch of m shows up as an offset of the thermal voltage times ln(m), which is proportional to absolute temperature and therefore drifts in proportion to itself. 3 333 parts per million per kelvin, at every mismatch on the slider, because the ratio is 1/T and contains nothing about the device at all.

semiconductors · Differential pair The best shunt drops 7.75 mV, whatever the current is. computed by solving, not by drawing. Two errors on one axis, both from solved networks: the shunt's own drop, which lowers the current that was to be measured, and the amplifier's 5.0 µV of offset divided by the voltage the shunt develops. The first rises with the burden voltage and the second falls, so the worst case has an interior minimum at 7.7460 mV — the geometric mean of the offset and the 12 V supply — where the error is 0.1291%, being twice the root of the offset over the supply. Neither the shunt's resistance nor the current appears in either number: at 1 A the answer is 7.75 mΩ, and at a hundred times the current it is the same burden voltage across a hundredth of the resistance. What does depend on the current is the 7.7 mW the shunt then dissipates, and 40 K of self-heating at 50 ppm/K is 0.2000% on its own. The third curve is the shunt's own Johnson noise in a kilohertz of measurement bandwidth, as a fraction of the current: it is 4.5e-6% at the best burden and is the only line here that moves with the current at all, falling as one over its square root — so above about an ampere it leaves the bottom of these axes entirely and is drawn nowhere rather than flattened onto the floor.

The ammeter that is a resistor

Every direct measurement of a current is a measurement of a voltage across something the current was made to flow through, so the instrument has two errors pointing opposite ways: a larger shunt changes the current, a smaller one leaves less for the amplifier's offset to be compared with. Written in the burden voltage they are the burden over the supply and the amplifier's offset over the burden, and the best of them is at the geometric mean — 7.75 millivolts on a twelve-volt rail, with a worst-case error of 0.129 per cent. Neither number contains a resistance, and neither contains the current: ten milliamps and a hundred amps want the same 7.75 millivolts.

instruments · Current sensing Linearising an exponential at 125 °C, and what it costs. The linear model understates the gain by 1% at 9.69 mV and by 10% at 30.2 mV. The thermal voltage at this temperature is 34.3 mV, so "small compared with Vₜ" is not the criterion — 28% of Vₜ is already 1% wrong.

The edges that move with the room

Every boundary in this collection is quoted at one temperature and most of them are functions of it. The small-signal edge is proportional to the thermal voltage, so it runs from 5.67 millivolts at −40 degrees to 9.69 at +125 — a factor of 1.71, the ratio of the absolute temperatures exactly. A realised Q is 1.54 per cent high at one end of that range and 2.58 at the other. The numbers are right; the condition attached to them was left off, and it is the same condition every time.

limits · Model edges Nine tenths of the heat is in the switch, and above 1.28 MHz there is no temperature at all. computed by solving, not by drawing. The junction temperature a recovering diode settles at, against switching frequency, with the carrier lifetime rising as the 1.8 power of absolute temperature so that the recovery gets worse as the junction gets hotter. Each event costs 15.43 µJ when cold, of which 90% is dissipated in whatever is pulling the current down rather than in the diode: while the junction is still conducting it holds almost no voltage, and the recovered charge is delivered through the switch at the full 100 V. That energy equals the diode's own conduction loss at 29.2 kHz. The fixed point T = Ta + Rth·P(T) is iterated from the ambient upward; the junction passes its rated 150 °C at 904 kHz, and above 1.28 MHz there is no temperature that satisfies it at all — the loop has gain and the solver reports the refusal rather than the last iterate.

The heat a recovery leaves behind

The essay below this one measured how much current a diode conducts backwards and for how long, and stopped there. Both numbers are multiplied by a voltage somewhere, and the surprise is where: while the junction is still conducting it holds almost nothing, so nine tenths of the energy is dissipated in the transistor pulling the current down and not in the diode. Repeat it a hundred thousand times a second and it is 1.5 watts, the lifetime rises with temperature, and above 1.28 megahertz the diode's own loop has no fixed point at all.

transients · Reverse recovery A ±15% envelope on what a bridge reads permits 29 points of working capacitance. computed by solving, not by drawing. The charge-average capacitance between zero and the rated voltage — the number a reservoir or a hold capacitor obeys — against how the data sheet's stated temperature change is divided between the model's two parameters. Every point honours the envelope exactly: the measured value at zero bias with a one-volt test signal is 15 per cent from nominal at each point on each curve, by construction. The working capacitance is not. At the cold end it is anywhere from -42.9 to -13.9 per cent — 29.0 points of ambiguity at a temperature where the measured value is pinned exactly — and at the hot end from 13.9 to 36.2. Across the whole envelope that is 79.0 points against the 30 the specification bounds, a factor of 2.63. The left-hand end of the upper curve is missing because it is impossible: with the amplitude fixed, no characteristic voltage makes the measured value exceed the zero-bias capacitance.

The coefficient that is about one reading

A class II ceramic's temperature coefficient is a third printed number, and it is a coefficient of the one capacitance a data sheet reports: what a bridge sees at zero bias with a one-volt test. The model behind the part has two parameters, one number does not determine two, and every way of dividing a ±15 per cent envelope between them honours the envelope exactly while putting the working capacitance anywhere across twenty-nine points — and two parts a bridge cannot tell apart differ by 1.80 at the voltage they are used at.

frequency · Real capacitor Two currents called saturation: one doubles every 4.49 K, the other every 8.98 K. computed by solving, not by drawing. The two current scales of one model junction against temperature, on a logarithmic axis. The saturation current of the exponential law goes as the square of the intrinsic carrier density — a cube of the temperature and the whole band gap in a Boltzmann factor — and doubles every 4.489 K at 300 K. The generation current a reverse-biased junction actually conducts goes as the density itself, with half the band gap, and doubles every 8.978 K: exactly twice as long, at every temperature. The dashed line is "doubles every ten kelvin" drawn through the generation scale, which is the current the rule belongs to. At 300 K this junction's two scales are 10 fA and 2 nA, which are its own parameters and not a property of silicon, and they become equal only at 616.8 K, or 343.6 °C.

Two currents with one name

A junction's saturation current is two currents with one name. The one in the forward law doubles every 4.49 kelvin; the one a reverse-biased junction actually conducts is generated in its depletion region, doubles every 8.98, and on this model junction is 3.06 × 10⁵ times larger at a volt of reverse bias. Doubles every ten kelvin is the second current's rule, and applied to the first it turns the forward drop's −1.81 millivolts per kelvin into +0.39.

limits · Diode model A bridge's reading turns over at 1.885 V, where the test level stops mattering. computed by solving, not by drawing. What a bridge reads is the fundamental of the charge waveform over the fundamental of the voltage, so it is a function of the bias AND of the amplitude, and a data sheet names one point of it: zero bias, one volt. The four curves are four test levels on one part. At zero bias they run from 9.999 µF down to 8.312 µF — the harder the drive the lower the reading, because the capacitance is at its maximum there and a sinusoid spends most of its time off the peak. At the rated 5 volts they run the other way, 2.000 µF up to 2.426 µF, because the curve is convex. Between them is one bias where the two effects cancel: at 1.8848 V a tenfold change of test level moves the reading by nothing at all, and that voltage is 0.6645 of the polarisation's own characteristic voltage.

The reading a data sheet does not take

A class II ceramic's temperature envelope leaves its working capacitance 29 points wide at one end and 79 across, because one printed number cannot pin a two-parameter model. One further bridge reading recovers almost all of it — and where the reading is taken decides everything. Turning the test level down to a fiftieth separates five parts a data sheet cannot tell apart by 17.76 per cent; moving the bias to half the rated voltage separates them by 176.02, and pins the working capacitance to ±0.512 per cent from a reading known to one.

frequency · Real capacitor A tenth of a per cent of lead is 999 µε of strain that is not there. computed by solving, not by drawing. A 350 Ω quarter bridge at zero load, against the resistance in each lead. With both leads in the changing arm the output is 4.99500 mV at 350 mΩ — an apparent fractional change of 0.1998%, which at a gauge factor of 2 is 999 microstrain. With one lead in that arm and one in the arm beside it the output is zero to the last bit, at every lead resistance drawn. The lower panel is what the second arrangement costs: the sensitivity falls as 1/(1 + Rlead/R), which is 0.100% at the same lead and is a calibration constant rather than a drift.

The leads that are in the bridge

A strain gauge on the end of two long wires cannot be told from a strain gauge under load: both leads in the changing arm is bit for bit the same netlist as a quarter bridge whose fractional change is larger by twice the lead over the gauge, which at 350 milliohms on a 350 ohm gauge is 999 microstrain that is not there. Moving one of those leads into the arm beside it leaves the output at exactly zero for every lead resistance drawn, and turns a twenty-kelvin drift of 76.8 microstrain into 0.077. That factor is two over the strain being read — 999 at a thousand microstrain and 9990 at two hundred — and it costs 0.100 per cent of sensitivity.

applied · Bridge What one temperature costs the loop gain of a part that has a gradient. computed by solving, not by drawing. The thermal loop gain of a 30 mm core, solved as a body with its own internal temperature profile and again as a single lump at that profile's mean, against the Biot number. Both are negative, so the core is a stabilising feedback either way — but the body's loop is the more negative of the two at every point, by 3.0 per cent at a Biot number of 0.108 and 38 per cent at 10.8. A lumped calculation therefore understates how stable a wound part is, and the amount it understates by is not a property of the material but of how well the surface is cooled relative to how well the inside conducts. Below a Biot number of about a tenth it is worth under two per cent and the lump is the right model; at the cooled end the part has 7 kelvin inside it and half the feedback is invisible to a single temperature.

The loop gain one temperature understates

Every thermal loop gain this collection has computed was computed at a single temperature, because a lumped fixed point has only one — and the essay that measured the gradient inside a core recorded, without measuring it, that this makes each of those numbers a lower bound. It is a lower bound by three per cent where a ferrite usually sits and by thirty-eight per cent at the well-cooled end, always in the direction that makes the part safer than the calculation said. The obvious candidate for what decides it is refused: three geometries at one Biot number are 3.3 times apart.

power · Thermal feedback The reading is a count of decades: 1.0288 parts per thousand of them. computed by solving, not by drawing. 17 marched tests, three families of absolute time — a tenth of a second, one second and ten seconds of short — plotted against the number of decades between the short and the reading. The families lie on one another, which is the finding: the answer is not a property of the part alone and not a property of either duration, it is a count of the decades of relaxation time the test leaves in. The line is a least-squares fit through the origin at 1.0288e-3 per decade; the model's own capacitance per decade of relaxation time is α = 1.0343e-3, which nothing in the fit was told — the fit sits 0.53 per cent under it, because the charge that comes back is shared with the slow branches it came off. The worst residual is 4.80 per cent, at the narrowest ratio drawn, and 1.23 per cent over the 8 tests that are two decades wide and read before the slowest relaxation the model has; the 3 read after it fall away to 4.49 per cent, which is where the law ends. Families a hundred times apart in absolute time differ by at most 0.84 per cent, which is the whole of the collapse.

Ten seconds, and fifteen minutes

A data sheet's dielectric absorption is quoted as a property of the part. It is not: the same modelled capacitor reads 0.4050 per cent with a tenth-of-a-second short and 0.0305 per cent with a thousand-second one, and 0.0047 against 0.2948 depending on when the reading is taken. Seventeen marched tests collapse onto one line — the recovery is 1.0288 parts per thousand for every decade between the two durations — and four dielectrics the specified test declares identical read a factor of 3.31 apart one decade away from it.

transients · Dielectric absorption A half-decibel filter that meets one decibel at 25 °C and does not at 89. computed by solving, not by drawing. The passband ripple of a fifth-order 0.5 dB Chebyshev built from three Sallen–Key sections, against temperature, with a part whose gain-bandwidth at 300 K is 300 kHz against a 1 kHz corner. Not one passive component has a temperature coefficient in this model. The ripple is 0.824 dB at −40 °C and 1.049 at +125, and it crosses a one-decibel specification at 88.6 °C — a boundary in temperature, which every other edge in this collection is not. The dashed line is the same filter with a tail current proportional to absolute temperature: 0.916 dB at both ends, and no crossing anywhere.

The ripple that is a temperature

An amplifier a hundred times the corner leaves a section's quality factor two per cent high. That two per cent has a temperature in it: with a tail current a resistor sets, the transconductance falls as one over absolute temperature, and a fifth-order half-decibel design whose passives have no temperature coefficient at all goes from 0.82 decibels of ripple at minus forty to 1.05 at a hundred and twenty-five — crossing a one-decibel specification at 89 °C. With the other bias it does not move at all.

filters · Q enhancement Two leads nobody counts cost 1995 parts per million, and two more leads remove all of it. computed by solving, not by drawing. The error in the reported strain against the resistance in each of the two excitation leads, at 1000 µε on a quarter bridge of 350 Ω excited at 10 V. With four wires the instrument takes the excitation to be the supply's voltage, so every reading is scaled by R/(R + 2r): 1995 parts per million at 0.35 Ω, 54029 at 10. Two more leads brought back from the bridge's own terminals, carrying only the instrument's input current, leave 3.5e-4 parts per million. Exciting with a current instead of a voltage does the same thing with no extra leads at all, because the lead resistance is in series with a source that does not care.

The two leads nobody counts

The leads that are in the bridge moved a lead out of the changing arm and turned a 999-microstrain error into nothing. The two leads carrying the excitation are still there, and they scale every reading: 0.35 ohms each on a 350-ohm bridge is 1,995 parts per million, exactly −2r/(R + 2r), the same on a full bridge as on a quarter one, and drifting 0.153 microstrain over twenty kelvin — twice what the three-wire fix left behind. Two more wires brought back from the bridge's own terminals leave 0.00035 parts per million. So does exciting the bridge with a current, which needs no extra wires at all.

applied · Bridge The direct-current error a bigger feedback resistor does not fix. computed by solving, not by drawing, at direct current with the amplifier in the netlist. A 1.0 nA photocurrent into 100 MΩ gives -0.100 V. The bias current flows in the same resistor, so its contribution is the ratio of the two currents — 0.1000% at 25 °C, and the same percentage at 1 MΩ and at 1 GΩ, which is checked by changing the resistor rather than by reading an expression. The amplifier's 100 µV of offset behaves the other way: it is multiplied by one plus the resistor over the diode's own leakage, so it grows with the resistor and with temperature. Both terms double every ten kelvin, for two different reasons, and at 85 °C they are 6.40% and 0.740% against 0.100% and 0.110% at 25.

The error a bigger resistor cannot help

Every other quantity in a photodiode amplifier improves with a larger feedback resistor: the signal grows as R and the resistor's own noise as √R, so the ratio goes as √R. The bias current does not behave like either — it flows in the same resistor the signal does, so its contribution is the ratio of the two currents with the resistance cancelled, 0.1 per cent at 25 °C and the same 0.1 per cent at a megohm and at a gigohm. The offset behaves the other way, growing as one plus the resistor over the diode's own leakage, and at 85 °C the two are 6.40 and 0.74 per cent against 0.10 and 0.11 at room temperature.

feedback · Transimpedance A diode thermometer measuring its own sense current, at 600 K/W. computed by solving, not by drawing. The same fixed point as the core and the thermistor, on a junction: the dissipation is I·V and V falls with temperature, so the loop gain is negative and the equation has one root at every current. What it costs is two errors. The junction sits above ambient by 0.29 millikelvin at a microamp and 4.26 kelvin at ten milliamperes, which a calibration removes; and a kelvin of ambient produces less than a kelvin of junction, by 1/(1 − R_th·dP/dT), which it does not. After a calibration at 25 degrees the reading at 85 is out by -583 millikelvin at ten milliamperes and -0.09 at a microamp. The coefficient itself moves too — -2.403 against -1.613 millivolts a kelvin — so a quoted tempco carries a sense current as well as a junction.

The sensor inside its own answer

A junction driven from a current source cannot run away, because its forward voltage falls with temperature and its loop gain is therefore negative. What that costs is a thermometer that is warmer than what it is measuring by 4.26 kelvin at ten milliamperes, and — the part a calibration cannot remove — under-reports every change in ambient by 9,584 parts per million, because the sense current's own dissipation falls as the reading rises. Calibrated at 25 degrees, it is out by 583 millikelvin at 85.

semiconductors · Thermal feedback The shunt's resistance as a function of what it is measuring. computed by solving, not by drawing, as a fixed point: the shunt dissipates I²R, its temperature rises by 20 K per watt, and at 50 ppm/K its resistance rises with its temperature — so the resistance the reading is divided by depends on the reading. Iterated to convergence it agrees with the closed form R₀/(1 − αθI²R₀) to 2.2e-16. Along the burden-voltage optimum, where R = u⁄I, the dissipation is I·u rather than I²R, so the temperature rise is 155 mK per ampere and the error is the FIRST power of the current — fitted exponent 1.0007 over five decades. That is the only one of the shunt's errors with the current in it, and it puts a term in I² into the reading, which is a curvature no single-current calibration removes. The upper curve is a shunt of fixed resistance, where the error is quadratic. The fixed point stops existing at 129 kA and never at a current a shunt will see.

The resistance that depends on the reading

Three of a shunt's errors are free of the current being measured, which is the whole content of the burden-voltage optimum. The fourth is not: the shunt dissipates, warms, and its resistance rises — so the divisor the reading uses is a function of the reading. Solved as a fixed point it agrees with R₀/(1 − αθI²R₀) to 2×10⁻¹⁶, and along the optimum, where the dissipation is I·u* rather than I²R, the error is the FIRST power of the current: 7.75 ppm at an ampere, 775 at a hundred, fitted exponent 1.0007.

instruments · Current sensing With 100 pA of junction leakage at 25 °C, a T keeps 2.8 bits over one switch and loses them all by 91 °C. computed by solving, not by drawing, at direct current, at every five kelvin from 0 to 150 °C. The floor — the least worse-of-two error any load gives — of a 0.5 Ω, 100 MΩ switch alone and as a T of three, from a buffered source, with a junction leakage of 100 pA at 25 °C on every terminal, doubling every 10 K, the worse sign taken. At 25 °C the lone switch's floor is 71.06 ppm (13.78 bits) and the T's 9.998 ppm (16.61 bits). The T is worse than one switch above 91.4 °C, where the junction current equals the off-resistance's conductance at one volt. The lone switch drops below 13 bits at 101.3 °C and below 12 at 125.9 °C; the T below 16 at 37.2 °C.

The leak no switch can hold

A T of three switches reaches five parts per billion because its shunt switch holds the node a leak has to cross. A junction leakage does not cross anything: it flows out of the outer switch's terminal straight into the load. With 100 picoamperes of it at 25 °C, doubling every ten kelvin, the T's floor is 9.998 parts per million rather than five parts per billion — 16.61 bits, not 27.6 — and it has a best load again, at 100 kilohms. A lone switch loses nothing at room temperature. Above 91.4 °C, where the junction current reaches the off-resistance's conductance at one volt, the T is worse than one switch.

limits · Ideal switch A 1 ms pulse of 100 A warms the element 98.7 mK: 4.94 ppm at its end, 2.86 ppm averaged, against 775 ppm held. computed by solving, not by drawing, from the exact step response of the shunt's thermal network — element, terminations and board, 0.2, 4 and 15.8 K/W with 5 mJ/K, 0.1 J/K and 2 J/K — expanded into its Foster modes. A 100 A pulse of 1 ms through the 77.5 µΩ shunt the burden optimum picks, dissipating I·u* = 0.775 W: the element rises 98.7 mK by the pulse's end and cools after it. At 50 ppm/K that is 4.94 ppm of error at the end of the pulse and 2.86 ppm averaged over it, where the same current held long enough for the board to settle would read 775 ppm high.

The pulse that ends before the heat

A shunt's self-heating error is a fixed point in the steady state — 775 ppm at 100 A for the shunt the burden optimum picks, through 20 K/W. A pulse never reaches it. Heat leaves the element through a ladder network — the element's own 5 mJ/K, its terminations, the board — and a pulse short against the element's millisecond heats it adiabatically, by P·t over its heat capacity alone: 0.737 ppm for 100 µs at 100 A, a thousandth of the held figure, 10.7 ppm for 10 ms. Along the burden optimum the error is linear in the current, so the current a pulse may carry for 100 ppm is exact: 12.9 A held, 936 A for 10 ms, 13.6 kA for 100 µs. A reading averaged over the pulse carries half the error of one taken at its end while the heating is adiabatic, and the section-by-section thermal model a data sheet quotes is 10% wrong at 7 ms.

instruments · Current sensing Parts sharing 90% of their error: the divider's ratio spreads 0.091% and the chain's total resistance 0.559% — one from the same four parts, cancelling, and one adding. computed by solving, not by drawing, over 20,000 seeded builds: four 1% resistors whose errors share a fraction ρ = 0.9 of their variance — as parts from one reel, one wafer or one temperature do — built into a divider tapped at the middle. The ratio's error (solid bars) has a standard deviation of 0.0912%, half the parts' 0.577% times √(1 − ρ); the total resistance of the same four in series (outline bars) has 0.5587%, the parts' spread times √(ρ + (1 − ρ)/4). Correlation that makes a ratio better makes a sum worse, by the same arithmetic.

What a ratio does not see

Parts from one reel, one wafer or one temperature share part of their error, and a circuit that uses them as a ratio cancels exactly the part they share. Four 1% resistors sharing ninety per cent of their error make a divider whose ratio spreads 0.091 per cent and a series chain whose total spreads 0.559 — the same four parts, one answer six times better than independent parts would give and one nearly twice as bad. The ratio's spread falls as √(1 − ρ), the total's rises as √(ρ + (1 − ρ)/4). From −40 to 85 °C the chain moves by up to 0.76 per cent and the ratio by 0.135, inside the ±25 ppm/K the coefficients differ by. And a resistor array whose parts share 99.5 per cent of their error puts a divider inside ±0.1 per cent every time that four discrete parts manage it one time in four.

networks · Component tolerance The dual bridged-T is the same function: at a ratio of 100 both floor at 0.0196 and both loops make a Q of 4.76. computed by solving, not by drawing. The transfer of an RC bridged-T — two 10 nF capacitors bridged by 100 kΩ with 1 kΩ from their junction to ground — and of its dual — two 10 kΩ resistors bridged by 1 nF with 100 nF from their junction to ground — over two decades about 1591.5 Hz. The two curves are one to 5.7e-8 of each other, which is the solver's own conditioning: the dual's capacitor ratio plays the resistor ratio's part exactly, the residue is 2/(2 + n) for both, and in a loop of gain 1000 both make a Q of 4.760. What differs is which components carry the ratio.

The dual that is the same function

Swap a bridged-T's resistors for capacitors and its capacitors for resistors and the transfer does not change: two 10 kΩ resistors bridged by 1 nF with 100 nF to ground are the RC network's 100 kΩ and 1 kΩ around two 10 nF capacitors, to 5.7×10⁻⁸, which is the solver's own conditioning. The residue is 2/(2 + n) for both and the loop's ceiling √n/2 for both. So the choice between them is not about the response; it is about which components carry the ratio. Near the ceiling the Q moves by half the ratio's error, and a ratio of two capacitors at ±5% spreads the Q by 10.0% where two resistors at ±1% spread it by 2.1% — and drifts 2.0% over a hundred kelvin where the resistors drift 0.25.

filters · Null depth A tee of factor 10 turns 1 µV/K of offset drift into 65.1 pA of error at −40 °C, 10 times the single resistor's. computed by solving, not by drawing. The direct-current error of a 10 MΩ photodiode amplifier calibrated at 25 °C, as the input current that would give the same output, against temperature: the part from the amplifier's offset drift of 1 µV/K (solid) and the part from its input bias current, 1 pA at 25 °C and doubling every 10 K (dashed), for a tee of factor 10 (heavy) and a single resistor (light). The offset reaches the output multiplied by the direct-current noise gain — one for the single resistor, since the source is a capacitor, and 10 for the tee — while the bias current sees the same transimpedance through both. The bias term overtakes the offset term at 85 °C with the tee and 40 °C with one resistor; below that the tee's error is the offset's, 10 times as large.

The drift a tee multiplies

A feedback tee reaches a large transimpedance with small resistors, and on a photodiode its price has been counted in noise: at direct current its noise gain is its own factor, where a single resistor's is one. The same noise gain multiplies the amplifier's offset. Calibrated at 25 °C and read at −40, a 10 MΩ amplifier with 1 µV/K of offset drift is 6.56 pA wrong through one resistor and 65.1 pA through a tee of factor ten — ten times, exactly, while the input bias current's error is identical through both. So the tee's drift penalty is hidden wherever the bias current dominates, which for a field-effect input doubling every 10 K is the hot end, and fully exposed at the cold end. The worst error over −40 to 85 °C comes within a factor of two of the single resistor's only above 10 MΩ for a tee of ten, and above 100 MΩ for a tee of a hundred.

feedback · Transimpedance With the capacitor tracking the inductor, one per cent of drift moves the Q = 5 response by at most 1.00%, at the peak — against −2.73% beside it with the capacitor held. computed by solving, not by drawing, from two netlists. The Q = 5 series RLC low-pass with its inductor raised by 1% and its capacitor changed by (1.01)^(−t) − 1, so that at t = 1 their product is unchanged; here t = 1. The fractional change in the response against frequency (solid), against the inductor alone with the capacitor held (dashed). The upper pole moves 9.90 × 10⁻⁴ ω₀ towards the axis and 0.99 × 10⁻⁴ ω₀ up it, and ω₀ by 0.00%. The largest change is 1.00% at 1.000 ω₀; with the capacitor held it is −2.73% at 1.115 ω₀. The slider is the tracking.

Two parts that drift together

A one per cent change in the inductor of a Q = 5 resonant low-pass moves its pole pair mostly downwards, and the response by 2.73% beside the peak. Let the capacitor fall by the same fraction as the inductor rises and their product is fixed, so ω₀ is: the pair can only go round its circle, sideways near the top, and the response changes by 1.00% at the peak and nowhere else — the change a resistor makes. The difference grows with Q: at Q = 20 one per cent of drift moves the band edge 10.2% with the capacitor held, 20.7% with it drifting the same way, and 1.00% with it tracking. Over −40 to 85 °C an inductor of +150 ppm/K moves a Q = 20 band edge 9.1% with a zero-coefficient capacitor and 0.57% with a −150 ppm/K one. Correlation between two parts' errors is itself a tolerance.

frequency · Frequency response Two 1% parts sharing 90% of their error: the divider's output spreads 0.129% at a half, 0.236% at ten to one and 0.258% at a hundred to one. computed by solving, not by drawing, over 20,000 seeded builds at each of seven ratios, every ratio computed exactly: a divider of two 1% parts, each with a uniform part's 0.577% spread and sharing a fraction ρ = 0.9 of it, with the top resistor N times the bottom. The output ratio's standard deviation (dots) against N, beside N/(N + 1)·√2·σ·√(1 − ρ) (line) and the same law for the other shared fractions (faint). N 1: 0.1286%; N 2: 0.1712%; N 5: 0.2145%; N 10: 0.2356%; N 20: 0.2477%; N 50: 0.2536%; N 100: 0.2581%. What is shared cancels at every ratio; what is not reaches the output with a leverage of N/(N + 1), which is a half for a halving divider and nearly one for a large ratio — so the same two parts make a ten-to-one divider 1.83 times worse.

The small leg of a large ratio

A divider of two 1% parts sharing ninety per cent of their error spreads 0.129 per cent at a half and 0.236 at ten to one — the same two parts, nearly twice as bad, because what they do not share reaches the output with a leverage of N/(N + 1) rather than one half. Correlation cancels at every ratio; the leverage does not. Built from equal units of one array, a divider of N to one spreads as σᵤ·√(N/M), so at any one area a ten-to-one ratio costs √10 against a half and needs ten times the units to match it, and the units it needs are the bottom leg's. And a ratio far from a half heats its own parts unequally: at 50 V across 11 kΩ the top of a two-part ten-to-one divider runs 46 K hotter than the bottom and the ratio moves 1,055 ppm with perfectly matched coefficients, where a chain of eleven equal units moves at most 29.

networks · Component tolerance Two junctions at 8 to 1 in area, at four currents from 10 µA to 10 mA. computed by solving, not by drawing: each drop is the diode law solved at its own temperature, from 200 to 400 K, with a saturation current that rises 15.0 orders of magnitude over the range. The two drops themselves sit 179 mV apart across the four currents; their difference does not move at all. It is Vₜ·ln 8 to 0.40 parts in a million at 10 mA and to 0.040% at the worst point, 10 µA at 400 K, where the larger junction's saturation current is no longer negligible against the current — 53.758 mV at 300 K, rising 179.19 µV/K — and the straight line through it reaches 0.001 µV at absolute zero (dashed).

The voltage at which the slope is zero

Two junctions carrying one current, one of them eight times the other's area, differ by exactly the thermal voltage times ln 8 — 53.758 mV at 300 K, rising 179.19 µV/K along a line that reaches zero at absolute zero to a thousandth of a microvolt — while each drop alone moves 1.9 mV/K. Weighted by 10.72 and added to one drop, the difference cancels it, and the sum is then 1.171704 V. That voltage is not a coincidence of this design: every weighting of the sum leaves the band gap at absolute zero, so a reference's slope at 300 K is its distance from 1.1717 V divided by 300 K, and two hundred references built wrong three different ways sit on that one line to 0.16 nV/K. A reference is trimmed by its voltage, at one temperature, and the voltage it is trimmed to is a statement about how its current is made.

semiconductors · Temperature A reference flattened at 300 K, from −40 to 125 °C, with its core current as T to the 1. computed by solving, not by drawing every 1.25 K. The reference has zero slope at 300 K by construction and its output there is 1.17170 V. It is never flat anywhere else: it falls 1.391 mV by −40 °C and 2.526 mV by 125 °C, a bow of 2.526 mV that no choice of the weight can remove, and the residue matches −(xti − α)·Vₜ·[x ln x − (x − 1)] with x = T/300 K (dashed) to within the diode law's "+1".

The bow a trim leaves

A band-gap reference trimmed to zero slope at 300 K is flat at exactly one temperature. Everywhere else it falls: 1.39 mV by −40 °C and 2.53 mV by 125 °C for a core biased proportional to absolute temperature, 3.79 mV for one run at a constant current, and nothing at all for one whose current rises as the cube of temperature. The residue is (xti − α) thermal voltages times x ln x − (x − 1), with x the temperature over the trim temperature, and six references of different bias, exponent and current fall on that one curve. The least box, 1.9 mV, comes from making the slope zero at 39 °C rather than at room temperature; quoted per kelvin it is 9.8 ppm/K over the automotive range and 4.2 over the commercial one. A third junction supplies the bow's own shape, and subtracting it leaves 18 µV — at an output that is then the band gap itself.

semiconductors · Temperature A field-effect input against a bipolar one biased for each source, at 25 °C. computed by solving, not by drawing. The field-effect input (dark) has 1 mA of drain current and a gate leakage that is 1 pA at 25 °C, from the junction's own law; the bipolar input (pale) is at its best current for each source. It wins between 2.83 kΩ and 5.14 GΩ. At 25 °C the ceiling was 5.14 GΩ; it falls in proportion to the leakage, which the slider's temperature multiplies.

The window that closes from the top

A field-effect input beats a bipolar one biased for each source between 2.83 kΩ and 5.14 GΩ at 25 °C, and the top of that window is twice the thermal voltage over √β times the transistor's gate leakage: it falls as fast as the input junction leaks. Carried through the junction's own law, the ceiling is 39.5 GΩ at 0 °C, 913 MΩ at 50 and 5.79 MΩ at 150 — while the floor does not move from 2.83 kΩ until 200 °C. A 1 GΩ sensor leaves the window at 48.6 °C, a 10 GΩ one at 16.4, about 33 kelvin a decade. The leakage's doubling interval is not ten kelvin but 7.5 at 0 °C and 15.0 at 150, so the rule of thumb is right at one temperature only.

noise · Shot noise An eighteen-segment diode table built at 300 K, carried to other temperatures four ways: the worst error over six decades of current. computed by solving, not by drawing: the two-mechanism junction's law moved with temperature, eighteen equal-ratio minimax segments from 100 nA to 100 mA fitted at 300 K (worst 1.886 mV). Unchanged, the table is out by 163.0 mV at 250 K and 265.5 mV at 400 K. One shift of every drop leaves 47.14 mV and 38.32 mV at 250 and 350 K. A shift per segment leaves 3.768 mV and 3.839 mV — and 14.67 mV at 400 K. Refitting every segment on the same breakpoints holds 1.573 mV to 2.379 mV at every temperature: the breakpoints never need to move.

The table that has to be refitted

Eighteen straight segments model a real diode from 100 nA to 100 mA to within 1.886 mV at 300 K. Carried to 350 K unchanged they are 149 mV out; moved by one common shift, 38.3 mV, because the drops at the bottom of the table fall 3.31 mV a kelvin and those at the top 1.54; moved by a shift each, 3.84 mV. That last correction holds within twice the table's own error over fifty kelvin either way and fails at 400 K, where the bottom of the table has dropped below the junction's own recombination current and is no longer an exponential at all. Refitted on the same breakpoints the table holds 1.57 to 2.38 mV at every temperature: the breakpoints never need to move, and the lines always do.

limits · Diode model A half-micron field-effect device's current against its gate voltage at 250, 300, 350 and 400 K, and the gate voltage at which they agree. computed by solving, not by drawing: mobility falling as T^−1.5, threshold falling 2 mV a kelvin, velocity saturation at 2 V. Below the crossing a warmer device draws more, because its threshold has fallen; above it less, because its mobility has. The curves agree at 1.7000 V, 1.0000 V of overdrive — the closed form's 2κT·vc/(1.5·vc − κT) — where 300 K draws 0.667 mA and 250 and 400 K draw 0.669 and 0.673 mA.

The overdrive at which temperature cancels

A field-effect device's current has two temperature coefficients pulling opposite ways: its threshold falls about two millivolts a kelvin, which raises the current, and its mobility falls as the temperature to the −1.5, which lowers it. They cancel at one overdrive, (4/3)κT = 0.800 V for a long channel, and the device's curves at every temperature cross there. Velocity saturation moves the crossing up — to 1.000 V at half a micron and 2.400 V at 0.15 µm — and, if the saturation velocity does not itself change with temperature, removes it altogether below a hundred nanometres. Below the zero a warmer device takes more current, the bipolar runaway in a device said to be free of it: 26 per cent more for 10 K at 0.1 V of overdrive.

semiconductors · Square law A milliohm read four-terminal with a drifting thermoelectric EMF: the error against the test current, read three ways, and the shunt's own heating. computed by solving, not by drawing: an EMF of 0.5 µV settled plus 1 µV relaxing with a minute's time constant, read thirty seconds after a disturbance with readings a second apart; the shunt 20 ppm/K and 20 K/W. At 10 mA one polarity is out by 11.1%, a reversal by 501 ppm, the three-reading delta by 4.14 ppm. Every EMF error falls as 1/I; the heating, 0.400 ppm at an ampere, rises as I². The best current is 11 A for one polarity (149 ppm in all), 1.8 A reversed (4.08 ppm) and 0.37 A with the delta (0.167 ppm).

The voltage four wires carry in

Four wires remove a resistance measurement's leads by keeping the sense loop free of current, and that loop is exactly where a thermoelectric voltage lives. Ten milliamps through a milliohm is ten microvolts, so every microvolt where a copper lead meets a brass terminal moves a single-polarity reading by a tenth. Reversing the current removes any EMF that holds still and leaves the change over one interval; the + − + delta leaves the second difference; four readings leave the third — 501 ppm, 4.14 and less at 10 mA while a disturbed junction settles. Against the shunt's own heating each scheme has a best current, and the least error rises only as the cube root of the shunt's temperature coefficient: the reading method moves the error by orders of magnitude, the alloy by a cube root.

instruments · Four-terminal At 1.00 A forward the silicon-carbide Schottky hands the switch more charge than the silicon PN diode above 245 V. computed by solving, not by drawing. The charge each diode returns through the switch when it is forced to block, against the reverse voltage, at 1.00 A forward and 100 A/µs. The silicon-carbide Schottky's is its depletion capacitance charged to the rail, closed form checked against Simpson's rule: 11.8 nC at 100 V, 25.0 nC at 400 V, 30.9 nC at 600 V, the same at any current. The ultrafast silicon diode's is its stored minority charge, 18.1 nC at this current from the recovery's closed form, plus 1.59 nC of its own capacitance at 400 V. The two are equal at 245.3 V.

The recovery a Schottky does have

A Schottky diode stores no minority charge and is quoted as having no reverse recovery. It has a depletion capacitance instead, and to block it must be charged to the rail through the switch: a 650 V silicon-carbide part holds 25.0 nC at 400 V whatever current it was carrying. An ultrafast silicon diode with a 20 ns lifetime returns 19.7 nC at 1 A, so below 1.42 A forward the diode said to have no recovery hands the switch more charge, and at 125 °C the boundary falls to 632 mA. In energy the capacitive charge costs 64.9 per cent of V·Q rather than all of it, and the boundary is 799 mA.

transients · Reverse recovery A follower section of Q = 5 on an amplifier 100 times the corner: +4.79% as designed from the formula; designed for that amplifier, exact at it, and +1.64% and −0.966% on parts 30% slow and fast. computed by solving, not by drawing: the realised Q of a unity-gain Sallen–Key section against the actual amplifier's gain–bandwidth, relative to the typical value it was chosen for, from the poles of the netlist. Designed from the textbook formula (solid): +6.51% at 0.7, +4.79% at 1, +3.78% at 1.3. Predistorted, with its capacitance ratio and resistors found by iteration on the netlist so that the typical part is exact (dashed): +1.64% at 0.7, exact at 1, −0.966% at 1.3. Predistortion moves the line down without changing its slope much: it removes the error the amplifier has in common and leaves what differs between amplifiers.

The Q designed for the amplifier

A follower section's Q comes out 4.79 per cent high at Q = 5 with an amplifier a hundred times the corner, and nothing stops a designer asking for 4.771 so that the real circuit lands on 5.000. That removes the error the amplifier has in common and leaves what differs between amplifiers: parts 30 per cent slow and fast read +1.64 and −0.97 per cent. So the exchange rate is the spread itself, and it is large. One per cent of Q across ±30 per cent asks for 725 times the corner from the formula and 196 designed for the part. The design runs out at a definite ratio, 7.2 times at Q = 5, below which no value of its parts reaches the Q wanted. On a whole Chebyshev 5 the passband error falls from 1.43 dB to nothing on a typical part and 0.55 on a slow one.

filters · Q enhancement

Named alongside it

The objects these essays reach for when they reach for this one.

Model rangeDesign tradeoffThermal voltageComponent toleranceMeasurement conditionSaturation currentBand gapClosed formDevice matchingFour-terminal sensingQuality factorSelf-heating

All concepts