Circuit Response
every model has an edge, and the figure carries it
Concept

Leakage current — where it appears

The current a device conducts when it is meant to conduct none, such as a reverse-biased junction or an open switch. In a junction it is mostly generation in the depletion region rather than the forward law's saturation current, so it is far larger, grows with reverse bias, and doubles about every nine kelvin.

Named by 4 essays across 2 fields — each of them below, with the objects they name alongside it.

Two currents called saturation: one doubles every 4.49 K, the other every 8.98 K. computed by solving, not by drawing. The two current scales of one model junction against temperature, on a logarithmic axis. The saturation current of the exponential law goes as the square of the intrinsic carrier density — a cube of the temperature and the whole band gap in a Boltzmann factor — and doubles every 4.489 K at 300 K. The generation current a reverse-biased junction actually conducts goes as the density itself, with half the band gap, and doubles every 8.978 K: exactly twice as long, at every temperature. The dashed line is "doubles every ten kelvin" drawn through the generation scale, which is the current the rule belongs to. At 300 K this junction's two scales are 10 fA and 2 nA, which are its own parameters and not a property of silicon, and they become equal only at 616.8 K, or 343.6 °C.

Two currents with one name

A junction's saturation current is two currents with one name. The one in the forward law doubles every 4.49 kelvin; the one a reverse-biased junction actually conducts is generated in its depletion region, doubles every 8.98, and on this model junction is 3.06 × 10⁵ times larger at a volt of reverse bias. Doubles every ten kelvin is the second current's rule, and applied to the first it turns the forward drop's −1.81 millivolts per kelvin into +0.39.

limits · Diode model At 300 K one junction holds a logarithm to ±1% over 2.4 decades as a diode and 8.5 at its collector. computed by solving, not by drawing. The voltage of one model junction against the logarithm of the current it carries, as a percentage error of that current from a straight line fitted over the widest range that stays within ±1%. Taken as a diode — both mechanisms and 0.6 Ω of series resistance — the range is 2.40 decades, from 50.1 nA to 12.6 µA, and its slope is an ideality of 1.982. Taken at the collector, where the recombination current is supplied from the base and 1.604 Ω remains, it is 8.50 decades, from the axis's own end at 1 pA to 316 µA, at an ideality of 1.0001. Nothing arrives beside the collector current, so its lower end on this axis is the axis.

The logarithm is in the collector

A diode is the textbook logarithm, and a real junction holds one to within one per cent over only 2.40 decades — from 50 nanoamps to 12.6 microamps, at an ideality of 1.98 — because two mechanisms and a series resistance share its terminals. The same junction read at a transistor's collector, with its recombination current supplied from the base, holds 8.50 decades at an ideality of 1.0001. How far the logarithm reaches is decided by which terminal the current is taken from, and at the bottom of the range by a leakage current a millivolt is enough to switch on.

limits · Diode model A clean board is 14.0 mV of error, and a guard makes it 1.0 nV. computed by solving, not by drawing. Two boards differing by one wire, solved with the leakage present and again with it removed, so the number plotted is the leakage's own contribution and nothing else. Unguarded, a teraohm across the laminate from a 15 V rail through a 1 GΩ source is 13.99 millivolts — and a humid morning takes that resistance down two decades, which is the left-hand end of this axis. Guarded, the ring is held at the input's own potential by the amplifier, so what is across the leakage is the amplifier's own error and the result is 1.00 nanovolts. The guarded line is flat in the rail and proportional to the signal: the offset has become a gain error of 1.00 parts per billion, and the reading is low by it rather than high: the ring sits a little below the input, so the last of the leakage pulls the input down.

The current that does not reach the input

A teraohm across a board from a fifteen-volt rail is fourteen millivolts of error through a gigohm source, and a humid morning takes that resistance down two decades. A ring held at the input's own potential leaves a nanovolt — proportional to the signal rather than to the rail, so an offset has become a gain error of one part in a billion — and the same wire multiplies the input resistance by the loop gain, which makes it 10¹⁸ Ω at direct current and 10¹² Ω at a megahertz.

instruments · Guarding With 100 pA of junction leakage at 25 °C, a T keeps 2.8 bits over one switch and loses them all by 91 °C. computed by solving, not by drawing, at direct current, at every five kelvin from 0 to 150 °C. The floor — the least worse-of-two error any load gives — of a 0.5 Ω, 100 MΩ switch alone and as a T of three, from a buffered source, with a junction leakage of 100 pA at 25 °C on every terminal, doubling every 10 K, the worse sign taken. At 25 °C the lone switch's floor is 71.06 ppm (13.78 bits) and the T's 9.998 ppm (16.61 bits). The T is worse than one switch above 91.4 °C, where the junction current equals the off-resistance's conductance at one volt. The lone switch drops below 13 bits at 101.3 °C and below 12 at 125.9 °C; the T below 16 at 37.2 °C.

The leak no switch can hold

A T of three switches reaches five parts per billion because its shunt switch holds the node a leak has to cross. A junction leakage does not cross anything: it flows out of the outer switch's terminal straight into the load. With 100 picoamperes of it at 25 °C, doubling every ten kelvin, the T's floor is 9.998 parts per million rather than five parts per billion — 16.61 bits, not 27.6 — and it has a best load again, at 100 kilohms. A lone switch loses nothing at room temperature. Above 91.4 °C, where the junction current reaches the off-resistance's conductance at one volt, the T is worse than one switch.

limits · Ideal switch

Named alongside it

The objects these essays reach for when they reach for this one.

Model rangeIdeality factorInput bias currentMeasurement conditionOperating pointSaturation currentTemperature coefficientThermal voltageBand gapBootstrappingBulk resistanceDesign tradeoff

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