Circuit Response
every model has an edge, and the figure carries it
Concept

Leakage current — where it appears

The current a device conducts when it is meant to conduct none, such as a reverse-biased junction or an open switch. In a junction it is mostly generation in the depletion region rather than the forward law's saturation current, so it is far larger, grows with reverse bias, and doubles about every nine kelvin.

Named by 7 essays across 3 fields — each of them below, with the objects they name alongside it.

Two currents called saturation: one doubles every 4.49 K, the other every 8.98 K. computed by solving, not by drawing. The two current scales of one model junction against temperature, on a logarithmic axis. The saturation current of the exponential law goes as the square of the intrinsic carrier density — a cube of the temperature and the whole band gap in a Boltzmann factor — and doubles every 4.489 K at 300 K. The generation current a reverse-biased junction actually conducts goes as the density itself, with half the band gap, and doubles every 8.978 K: exactly twice as long, at every temperature. The dashed line is "doubles every ten kelvin" drawn through the generation scale, which is the current the rule belongs to. At 300 K this junction's two scales are 10 fA and 2 nA, which are its own parameters and not a property of silicon, and they become equal only at 616.8 K, or 343.6 °C.

Two currents with one name

A junction's saturation current is two currents with one name. The one in the forward law doubles every 4.49 kelvin; the one a reverse-biased junction actually conducts is generated in its depletion region, doubles every 8.98, and on this model junction is 3.06 × 10⁵ times larger at a volt of reverse bias. Doubles every ten kelvin is the second current's rule, and applied to the first it turns the forward drop's −1.81 millivolts per kelvin into +0.39.

limits · Diode model At 300 K one junction holds a logarithm to ±1% over 2.4 decades as a diode and 8.5 at its collector. computed by solving, not by drawing. The voltage of one model junction against the logarithm of the current it carries, as a percentage error of that current from a straight line fitted over the widest range that stays within ±1%. Taken as a diode — both mechanisms and 0.6 Ω of series resistance — the range is 2.40 decades, from 50.1 nA to 12.6 µA, and its slope is an ideality of 1.982. Taken at the collector, where the recombination current is supplied from the base and 1.604 Ω remains, it is 8.50 decades, from the axis's own end at 1 pA to 316 µA, at an ideality of 1.0001. Nothing arrives beside the collector current, so its lower end on this axis is the axis.

The logarithm is in the collector

A diode is the textbook logarithm, and a real junction holds one to within one per cent over only 2.40 decades — from 50 nanoamps to 12.6 microamps, at an ideality of 1.98 — because two mechanisms and a series resistance share its terminals. The same junction read at a transistor's collector, with its recombination current supplied from the base, holds 8.50 decades at an ideality of 1.0001. How far the logarithm reaches is decided by which terminal the current is taken from, and at the bottom of the range by a leakage current a millivolt is enough to switch on.

limits · Diode model A clean board is 14.0 mV of error, and a guard makes it 1.0 nV. computed by solving, not by drawing. Two boards differing by one wire, solved with the leakage present and again with it removed, so the number plotted is the leakage's own contribution and nothing else. Unguarded, a teraohm across the laminate from a 15 V rail through a 1 GΩ source is 13.99 millivolts — and a humid morning takes that resistance down two decades, which is the left-hand end of this axis. Guarded, the ring is held at the input's own potential by the amplifier, so what is across the leakage is the amplifier's own error and the result is 1.00 nanovolts. The guarded line is flat in the rail and proportional to the signal: the offset has become a gain error of 1.00 parts per billion, and the reading is low by it rather than high: the ring sits a little below the input, so the last of the leakage pulls the input down.

The current that does not reach the input

A teraohm across a board from a fifteen-volt rail is fourteen millivolts of error through a gigohm source, and a humid morning takes that resistance down two decades. A ring held at the input's own potential leaves a nanovolt — proportional to the signal rather than to the rail, so an offset has become a gain error of one part in a billion — and the same wire multiplies the input resistance by the loop gain, which makes it 10¹⁸ Ω at direct current and 10¹² Ω at a megahertz.

instruments · Guarding With 100 pA of junction leakage at 25 °C, a T keeps 2.8 bits over one switch and loses them all by 91 °C. computed by solving, not by drawing, at direct current, at every five kelvin from 0 to 150 °C. The floor — the least worse-of-two error any load gives — of a 0.5 Ω, 100 MΩ switch alone and as a T of three, from a buffered source, with a junction leakage of 100 pA at 25 °C on every terminal, doubling every 10 K, the worse sign taken. At 25 °C the lone switch's floor is 71.06 ppm (13.78 bits) and the T's 9.998 ppm (16.61 bits). The T is worse than one switch above 91.4 °C, where the junction current equals the off-resistance's conductance at one volt. The lone switch drops below 13 bits at 101.3 °C and below 12 at 125.9 °C; the T below 16 at 37.2 °C.

The leak no switch can hold

A T of three switches reaches five parts per billion because its shunt switch holds the node a leak has to cross. A junction leakage does not cross anything: it flows out of the outer switch's terminal straight into the load. With 100 picoamperes of it at 25 °C, doubling every ten kelvin, the T's floor is 9.998 parts per million rather than five parts per billion — 16.61 bits, not 27.6 — and it has a best load again, at 100 kilohms. A lone switch loses nothing at room temperature. Above 91.4 °C, where the junction current reaches the off-resistance's conductance at one volt, the T is worse than one switch.

limits · Ideal switch A field-effect input beats a bipolar one biased for each source from 2.83 kΩ to 5 GΩ. computed by solving, not by drawing. The noise figure a field-effect input shows a source — drain current 1 mA, voltage noise 2.31 nV/√Hz from its channel, current noise 0.566 fA/√Hz from 1 pA of gate leakage — against a bipolar input of β = 100 and 50 Ω of base resistance with its collector current set for each source, whose best is 1 + rb/Rₛ + 1/√β. The field-effect input is quieter between 2.83 kΩ and 5 GΩ; the closed forms √β·(Rₙ − rb) and 2Vₜ/(√β·Iₗ) give 2.83 kΩ and 5 GΩ. Its own best, 0.0007 dB, is at 4.08 MΩ; the bipolar floor never goes below 0.414 dB.

The window a field-effect input wins in

A bipolar input's two noise generators are one current's shot noise split two ways, so their product, and with it the best noise figure, is fixed at 1 + 1/√β, 0.414 dB at a gain of a hundred, whatever the bias. A field-effect input's are two unrelated things. Its voltage noise is its channel's and its current noise is the shot noise of its gate leakage, so their product is a design variable: 0.0007 dB at a milliampere of drain and a picoampere of leakage. Against a bipolar input biased for each source, the field-effect input wins in a window of source resistance with two ends in closed form, from 2.83 kΩ, set by the two inputs' noise resistances, up to 5 GΩ, set by the gate leakage. A nanoampere of leakage brings the top down to 5 MΩ, and 438 nA closes the window.

noise · Shot noise A field-effect input against a bipolar one biased for each source, at 25 °C. computed by solving, not by drawing. The field-effect input (dark) has 1 mA of drain current and a gate leakage that is 1 pA at 25 °C, from the junction's own law; the bipolar input (pale) is at its best current for each source. It wins between 2.83 kΩ and 5.14 GΩ. At 25 °C the ceiling was 5.14 GΩ; it falls in proportion to the leakage, which the slider's temperature multiplies.

The window that closes from the top

A field-effect input beats a bipolar one biased for each source between 2.83 kΩ and 5.14 GΩ at 25 °C, and the top of that window is twice the thermal voltage over √β times the transistor's gate leakage: it falls as fast as the input junction leaks. Carried through the junction's own law, the ceiling is 39.5 GΩ at 0 °C, 913 MΩ at 50 and 5.79 MΩ at 150 — while the floor does not move from 2.83 kΩ until 200 °C. A 1 GΩ sensor leaves the window at 48.6 °C, a 10 GΩ one at 16.4, about 33 kelvin a decade. The leakage's doubling interval is not ten kelvin but 7.5 at 0 °C and 15.0 at 150, so the rule of thumb is right at one temperature only.

noise · Shot noise An integrator of 100 kΩ and 1 µF with its input grounded: what its own input currents do to it. computed by solving, not by drawing, marched for ten seconds from rest. With 50 nA flowing out of each input and the + input grounded, the output ramps at 50.0 mV/s — the bias current over the capacitance, to six figures — and reaches 0.500 V. With 100 kΩ in the + input to balance the resistances, only the 5 nA of offset current is left and the ramp is 5.00 mV/s. Neither stops: an integrator has no gain to quote, because its gain is time.

The current a capacitor adds up

An amplifier's input current in a resistor is an offset; in a capacitor it is a rate, and time is the gain. An integrator of 100 kΩ and 1 µF with its input grounded ramps at 50.0 mV/s from 50 nA, and balancing the inputs leaves the 5.00 mV/s of the offset current, still unbounded. A leak resistor bounds it at the current times the leak and costs the lowest frequency the circuit integrates. A hold capacitor's droop times its acquisition time is fixed, so 50 nA through a 100 Ω switch needs 655 nF and 0.77 ms for half a 16-bit step. A charge amplifier's offset times its low corner is Ib/2πCf, whatever its bleed.

instruments · Input bias current

Named alongside it

The objects these essays reach for when they reach for this one.

Model rangeInput bias currentSaturation currentTemperature coefficientCurrent noiseDesign tradeoffIdeality factorMeasurement conditionNoise figureOperating pointOptimum source resistanceShot noise

All concepts