Circuit Response
every model has an edge, and the figure carries it
Concept

Operating point — where it appears

The direct voltages and currents a nonlinear circuit settles at with no signal applied, where the device laws and the network agree. It is a solution rather than a choice: the resistor decides which current the device carries and nothing about the relation between its current and its voltage.

Named by 21 essays across 4 fields — each of them below, with the objects they name alongside it.

A diode fed from 5 V through 1.0 kΩ. computed by solving, not by drawing. The operating point is where the exponential meets the load line: 0.692544 V and 4.3075 mA, reached in 13 damped Newton steps from a cold start. The one-line Newton on Vs = v + R·i(v), which touches no matrix, gives 0.692544 V. The "drop" is not a constant: it moves 59.53 mV per decade of current, measured between two solved operating points.

A bias point is a solution, not a choice

The phrase "the diode drops 0.7 volts" is a constant standing in for the root of a transcendental equation. Solved properly, from a five-volt supply through a kilohm, it drops 0.692544 V — and from forty-eight volts through the same kilohm it drops 0.754459 V, because the drop moves about sixty millivolts for every decade of current through it.

semiconductors · Operating point What a 0.7 V constant costs, in the quantity it is used to predict. computed by solving, not by drawing by Newton's method on the exponential at 94 supplies through four resistors. The model is exact at 5.748 mA — the current at which the true drop is 0.7 V — and every curve crosses zero there, at four different supplies. Below it the model is low and above it high, and how much depends on the headroom rather than on the diode. Through the 87 Ω curve the drop is 49 mV out at 0.725 V and 147 mV out at 150.7 V — a factor of 3.0 — while the error in the current falls from -66% to 0.10%, a factor of 674, because the headroom underneath it has grown by 2017. On that curve the model is inside one per cent only above 1.12 V.

The one current a constant is right at

Seven-tenths of a volt is the true forward drop at 5.748 milliamperes and at no other current, and every circuit built on it crosses zero error there — four different resistors at four different supplies, all exact at the same current. What decides whether the model is any good is not the diode at all; it is how much of the supply the diode is taking.

limits · Diode model A diode's drop from 250 to 400 K, at 1.00 mA. computed by solving, not by drawing. Thirty-one operating points, each Newton's method on the exponential at its own temperature. The drop falls at 1.828 mV/K measured against 1.830 mV/K from the closed form — falls, although the thermal voltage in the exponent rises, because the saturation current rises faster. Over the same range the slope per decade of current goes the other way, from 49.6 mV to 79.4 mV, because that one is Vₜ ln 10 and nothing else.

Two millivolts a kelvin, and the wrong sign

Every number in the semiconductor field was computed at 300 K, and the model had no temperature in it at all. Putting it in moves a diode's drop by 1.828 mV/K — downwards, although the thermal voltage in the exponent is rising, because the saturation current rises by nine orders of magnitude across the same range. Two temperature dependences of one device, of opposite sign, from one solve.

semiconductors · Temperature One diode curve, eight one-decade fits, and eight different ideality factors. computed by solving, not by drawing. A junction with two conduction mechanisms — recombination near n = 2 at low current, diffusion near n = 1 above it — and a series resistance, which is what a real diode is. Fitting ln(i) against v over each decade in turn returns an ideality factor for each, and they run from 1.227 to 1.984 without being monotonic: the factor rises through the recombination region, falls through the diffusion region, and rises again where the series resistance takes over. Two of the windows are straight to a few parts in a thousand, so the residual gives no warning. The bars are what each fit predicts for the forward voltage at 1 mA: the worst is out by -186 millivolts, which is a current 0.01 times the truth.

The constant that is a window

A diode's ideality factor is quoted as a number and defined as a derivative, which means it has a value at every current and no value anywhere. Eight one-decade fits to one curve return factors from 1.23 to 1.98, two of them straight to a few parts in a thousand — so the residual gives no warning at all. Asked for the forward voltage at a milliamp, the window containing it is right to a third of a millivolt and the worst is out by 186, which is a current a hundredth of the truth.

limits · Diode model A copy out by 1.3% for the reason everybody names, and 11% for the one nobody does. computed by solving, not by drawing at 60 output voltages, with the Early conductance iterated to self-consistency against the current that sets it. Two base currents are stolen from the reference, so the copy is β/(β+2) of it — 1.32% low at β = 150 — and that is exact at exactly one output voltage, 0.7043 V, which is 9.39 mV under the reference's own base-emitter voltage of 0.7137 V — a displacement that goes as 1/(β+2), so that the product of the two is 1.427 V at every β the slider offers. Everywhere else the Early effect is larger: the current rises at 1.21% per volt, so moving the output from one volt to ten changes it by 11.2%. One per cent holds over 0.810 V, which is the Early voltage over a hundred and contains neither the current nor any resistor. The slider is β: it moves the first error by fifty times and the second by nothing at all.

The copy, and its two errors

Every account of a current mirror leads with the base currents: two are stolen from the reference, so the copy is beta over beta plus two, which is 1.32 per cent at beta of 150 and is what a third transistor is spent on. The Early effect is a footnote and is nine times larger over any useful swing — 11.2 per cent between one volt and ten. Moving beta from 20 to 1000 changes the first by a factor of forty-five and the second by nothing at all.

semiconductors · Current mirror Two currents called saturation: one doubles every 4.49 K, the other every 8.98 K. computed by solving, not by drawing. The two current scales of one model junction against temperature, on a logarithmic axis. The saturation current of the exponential law goes as the square of the intrinsic carrier density — a cube of the temperature and the whole band gap in a Boltzmann factor — and doubles every 4.489 K at 300 K. The generation current a reverse-biased junction actually conducts goes as the density itself, with half the band gap, and doubles every 8.978 K: exactly twice as long, at every temperature. The dashed line is "doubles every ten kelvin" drawn through the generation scale, which is the current the rule belongs to. At 300 K this junction's two scales are 10 fA and 2 nA, which are its own parameters and not a property of silicon, and they become equal only at 616.8 K, or 343.6 °C.

Two currents with one name

A junction's saturation current is two currents with one name. The one in the forward law doubles every 4.49 kelvin; the one a reverse-biased junction actually conducts is generated in its depletion region, doubles every 8.98, and on this model junction is 3.06 × 10⁵ times larger at a volt of reverse bias. Doubles every ten kelvin is the second current's rule, and applied to the first it turns the forward drop's −1.81 millivolts per kelvin into +0.39.

limits · Diode model The square law is within 1% over a factor of 1.06 in overdrive. computed by solving, not by drawing. One field-effect device drawn against the two models it is between: the square law, which is zero below threshold and rises as the square of the overdrive, and the weak-inversion exponential, which rises at 77.4 mV per decade. The device is neither and approaches both. The two errors point opposite ways — the subthreshold current lifts it above the square law below, and velocity saturation holds it below above — so the square law is exact at 156.5 mV and the shaded band is where it is inside 1%: 152.0 mV to 161.7 mV, a factor of 1.06. The slider is the velocity-saturation voltage, which is the channel length times a critical field, so what it moves is the band's width and not its position.

The exponent that is a square

Every device in this collection so far has been an exponential, and the whole of its arithmetic — 59.5 millivolts a decade, a distortion edge at 1.03 millivolts, 3,333 parts per million a kelvin — comes out of that one law. A field-effect device obeys a different one, and the interesting part is that it obeys both: an exponential below threshold and a square above it. The square law is within one per cent over a factor of 1.06 in overdrive at half a micron, and the two errors that bound it point opposite ways.

semiconductors · Square law A fit to the held curve reads the series resistance falling to nothing at 532 K/W. computed by solving, not by drawing. Each point is a three-parameter fit — a constant, an ideality factor and a series resistance — to the held forward curve between 10 and 100 mA, for a junction built with 0.6 Ω and no temperature coefficient on it, mounted at the thermal resistance on the axis. With no thermal resistance the fit returns 0.580 Ω with a residual of 43.9 µV. At 350 K/W it returns 0.184 Ω, an ideality of 1.086 and a residual of 34.0 µV. The resistance it reports reaches zero at 531.7 K/W and is negative beyond.

The resistance a slow curve cannot see

A diode's series resistance is read off the top of its forward curve, and a bench curve is a slow one: each point is held until the junction has warmed to it. Through 350 kelvin per watt the held curve sits 39.7 millivolts below the pulsed one at 100 milliamps, and the three-parameter fit that reads 0.580 ohms from the pulsed curve reads 0.184 from the held one — with a smaller residual. The fitted resistance reaches zero at 531.7 kelvin per watt, and the resistance it hid is what keeps the junction from folding back: with 0.05 ohms instead of 0.6 the held curve turns over at 87.6 milliamps.

limits · Diode model At 300 K one junction holds a logarithm to ±1% over 2.4 decades as a diode and 8.5 at its collector. computed by solving, not by drawing. The voltage of one model junction against the logarithm of the current it carries, as a percentage error of that current from a straight line fitted over the widest range that stays within ±1%. Taken as a diode — both mechanisms and 0.6 Ω of series resistance — the range is 2.40 decades, from 50.1 nA to 12.6 µA, and its slope is an ideality of 1.982. Taken at the collector, where the recombination current is supplied from the base and 1.604 Ω remains, it is 8.50 decades, from the axis's own end at 1 pA to 316 µA, at an ideality of 1.0001. Nothing arrives beside the collector current, so its lower end on this axis is the axis.

The logarithm is in the collector

A diode is the textbook logarithm, and a real junction holds one to within one per cent over only 2.40 decades — from 50 nanoamps to 12.6 microamps, at an ideality of 1.98 — because two mechanisms and a series resistance share its terminals. The same junction read at a transistor's collector, with its recombination current supplied from the base, holds 8.50 decades at an ideality of 1.0001. How far the logarithm reaches is decided by which terminal the current is taken from, and at the bottom of the range by a leakage current a millivolt is enough to switch on.

limits · Diode model A cascoded mirror is 90× the output resistance, and 43% of it goes back into the reference. computed by solving, not by drawing. The output resistance of a two-transistor mirror and of the same mirror with a cascode on each branch, measured by moving the output a little either side of its operating point and reading the current, against the current gain of every device. The plain mirror sits at rₒ = 89 kΩ and does not move. The cascoded one reaches 7.39 MΩ at β = 150 and rises with β until β stops being the smaller of the two quantities, where it saturates on gₘrₒ² = 268 MΩ. The third curve replaces the diode-connected upper device with a held voltage at the same potential and recovers 1.76 times the resistance, which is the upper device's base current being charged a second time — to the reference branch, where it moves the mirror's own bias.

The source that holds to the supply

Putting a second transistor on each branch of a current mirror is always described as buying output resistance and costing headroom, and both halves of that are measured here rather than repeated. The resistance goes from 82 kΩ to 7.39 MΩ, the floor rises by 0.71 volts — and the range over which the current is actually what it was set to goes from 1.70 volts to 9.09, because a plain mirror's current never stops climbing. Forty-three per cent of the resistance that should be there is missing, and it is in the reference branch.

semiconductors · Cascode 300 mirrors built to one design, with 2% device mismatch. computed by solving, not by drawing. Every pair in the population is a full Newton solve of the same netlist with two saturation currents drawn from a normal distribution, the Early conductances iterated to self-consistency for each. The mean is 3.836 per cent, which is the systematic error the rung below computed with identical devices (3.937 per cent) — the mismatch does not move it. The spread about it is 1.955 per cent, which is the device mismatch arriving with nothing dividing it, and the worst pair of the 300 is 8.43 per cent out. A design whose specification is the mean has specified the one mirror nobody has.

The error that is a distribution

The rung below solved a mirror and separated two errors — one that falls with beta and one that does not. Neither is what limits a real mirror. Two transistors on the same die differ, a fractional difference in saturation current is a fractional difference in collector current with nothing dividing it, and the honest object is a spread rather than a number: mean 3.84 per cent, standard deviation 1.96, worst of three hundred 8.43. Degeneration divides it by one plus gm·R and stops at the resistors' own tolerance, and where it stops is a voltage — a hundred millivolts, containing nothing but the ratio of two tolerances.

semiconductors · Current mirror The load that takes the most power is 3.67 Ω, and the open-circuit voltage over the short-circuit current is 3.97 Ω. computed by solving, not by drawing. The terminal characteristic of a photocurrent with a junction across it, with the power along it drawn on the same axes and scaled to fill them. The most power, 80.99 W, is delivered at 17.244 V and 4.696 A, which is a load of 3.67 Ω. The incremental resistance of the source there — the negative of the characteristic's own slope — is 3.67 Ω, the same number to four figures. A straight line drawn between the two end points has a resistance of 3.97 Ω and would promise 24.81 W. The ratio of the true maximum to that promise is 3.264, and its reciprocal is the fill factor, 0.8160.

The load a curve recommends

The maximum power theorem says to match the load to the source's internal resistance, and for a straight-line source the internal resistance, the slope and the open-circuit voltage over the short-circuit current are one number. On a photovoltaic panel they are three: the slope at the maximum is 3.6717 ohms, the load there is 3.6717, and the open-circuit voltage over the short-circuit current is 3.9709 — and a quarter of the open-circuit voltage times the short-circuit current, which is what a straight line would deliver, is 24.81 watts against the 80.99 that is there. The theorem survives with the incremental resistance in place of the internal one, and it survives only where the characteristic has a slope: on a supply whose current limit folds back, the most power is delivered at a corner.

networks · Source model 50 Ω + j100 Ω of line: every power below the nose at two voltages, and a leading load's nose at 1.055 of the source. computed by solving, not by drawing: a load of fixed angle swept in size from open circuit to short circuit on a line of 50 Ω + j100 Ω, with the power it takes against the voltage it is left with, for four load angles. Each curve rises to a most power and turns back while the voltage keeps falling, so every smaller power is delivered at two voltages and every larger one at none. A 30° lagging load reaches 0.4222 of a matched resistive line's power with 0.5221 of the source voltage left; a unity power factor load reaches 0.6180 of a matched resistive line's power with 0.5878 of the source voltage left; a 30° leading load reaches 0.8240 of a matched resistive line's power with 0.7293 of the source voltage left; a 60° leading load reaches 0.9960 of a matched resistive line's power with 1.0553 of the source voltage left. Each nose is found by golden-section search on the solved network, agrees with V²cos φ/(2|Z|(1 + cos(θ − φ))), and falls where the load impedance's magnitude equals the line's.

The load that has two voltages or none

A load that takes a fixed power takes more current as its voltage falls, and on a line with impedance in it every power below a limit is delivered at two voltages and every power above it at none. The limit sits at the load the maximum-power theorem describes, half the source voltage on a resistive line. On fifty ohms and a hundred of reactance a load leading by sixty degrees reaches that limit with its far end at 1.055 of the source, and at nine tenths of it reads 1.172 — so a far end that reads high is not a far end with margin. On a direct-current bus the lower of the two voltages is not a state at all: one per cent below it the bus runs down to nothing in 3.48 milliseconds.

power · Voltage regulation One output in saturation takes 6.5% off another that is at five volts. computed by solving, not by drawing. A three-transistor mirror: a reference, an output taken down into saturation, and a third output held at five volts throughout. The upper curve is the saturating output's own loss and the lower one is the sibling's. At 50 mV the saturating output is 27.3 per cent down and the sibling, which is nowhere near saturation, is 6.54 per cent down. The reference current moves by -0.0188 per cent, which is nothing: a base current is a hundred and fiftieth of a collector current and the reference is set by a resistor from the supply. What does move is the base-emitter voltage every output shares — by -1.75 millivolts — and every output is an exponential of it.

The refusal, and what it was protecting

A current mirror's model has declined to answer below two hundred millivolts of collector-emitter voltage since it was written, because it has no base-collector junction and would return a forward-active current for a saturated transistor. Put the junction in and the refusal turns out to have been placed where the model it protects is still right to seven parts in ten thousand — and the mirror's real failure is somewhere else entirely: a saturated output takes six and a half per cent off an output that is sitting at five volts.

semiconductors · Current mirror Three amplitudes, all of them "one per cent wrong". computed by solving, not by drawing. An exponential driven by a sinusoid has I₀(a) as its mean, 2I₁(a) as its fundamental and 2Iₙ(a) as its harmonics, all checked here against a numerical transform of the waveform itself, agreeing to 9.0e-11. Each gives a different one-per-cent boundary at 27 °C: 1.03 mV for the second harmonic, 5.17 mV for the shift in the operating point the model was linearised about, and 7.30 mV for the gain — which is 1 : 5 : 5√2 at this criterion, and the largest of them is the one usually quoted. The spacing is not a property of the device: the second harmonic is first order in the amplitude and the other two are second, so tightening the criterion to a part in ten thousand spreads the same three to 1 : 50.0 : 70.71. At a drive of one thermal voltage the bias current is 26.6% above quiescent, which is the boundary nobody counts because it moves the thing the model was built at rather than what the model predicts.

Three amplitudes, all of them one per cent

The amplitude at which linearising an exponential is one per cent wrong is 7.30 mV, and that is a statement about the gain. Two other quantities are also one per cent wrong somewhere: the second harmonic reaches one per cent at 1.03 mV and the shift in the operating point the model was linearised about reaches it at 5.17 — which is √2 below the gain boundary exactly, because the mean goes as a²/4 and the fundamental as a²/8. And the spacing is not a property of the device: tighten the criterion to a part in ten thousand and the same three spread to 1 : 50 : 70.7.

limits · Small-signal With its own capacitance at B|Z| = 0.2, a line's nose for a unity-power-factor load moves from 0.618 to 0.658 of a matched line's power, at 0.635 of the source. computed by solving, not by drawing: a unity-power-factor load swept in size from open circuit to short circuit on a line of 50 Ω + j100 Ω carrying its own shunt capacitance as a π, half at each end, with the total susceptance stated as B|Z|. At B|Z| = 0 the nose is 0.6180 of a matched resistive line's power with 0.5878 of the source voltage left, and the unloaded far end reads 1.0000. At B|Z| = 0.1 the nose is 0.6376 of a matched resistive line's power with 0.6108 of the source voltage left, and the unloaded far end reads 1.0465. At B|Z| = 0.2 the nose is 0.6582 of a matched resistive line's power with 0.6353 of the source voltage left, and the unloaded far end reads 1.0969. At B|Z| = 0.4 the nose is 0.7025 of a matched resistive line's power with 0.6895 of the source voltage left, and the unloaded far end reads 1.2107. Each nose is found by golden-section search on the solved network and agrees with the nose of the Thevenin equivalent V/(1 + jBZ/2) behind Z/(1 + jBZ/2).

The headroom that is the line's own charge

A line of 50 + j100 ohms delivers at most 0.6180 of a matched resistive line's power to a unity-power-factor load, with 0.5878 of the source voltage left. Give the line its own shunt capacitance — a π, half at each end, B|Z| = 0.4 in all — and the nose moves to 0.7025 at 0.6895: 13.7 per cent more power and 17.3 per cent more voltage. It is headroom, but not the headroom the far end advertises, which with no load rises 21.1 per cent. The capacitance turns the source and line into a Thevenin equivalent with more voltage behind more impedance, and it moves a voltage threshold's meaning in opposite directions depending on whether it is referred to the source or to the unloaded far end.

power · Voltage regulation A regulator holding 10 V on a load that asks for 101% of the nose power collapses it in 256 s; at 110%, in 79 s. Marched with a fourth-order rule. A 10 V source behind 1 Ω feeds a load resistance through an ideal ratio n, and a regulator raises n at 0.05 per volt-second of error to hold the load at 10 V. The load's resistance is chosen so that at 10 V it takes the stated fraction of the most the line can deliver, 25 W. At 90% the regulator settles at n = 1.5195, below the nose ratio √(Rₗ/R) = 2.1082. At 99% the regulator settles at n = 1.8182, below the nose ratio √(Rₗ/R) = 2.0101. At 101% the voltage climbs to 9.950 V — the most the line allows that load, V₀√(Rₗ/R)/2 — at 101.7 s, and falls below half the setpoint at 256.3 s while the regulator keeps raising the ratio. At 110% the voltage climbs to 9.535 V — the most the line allows that load, V₀√(Rₗ/R)/2 — at 23.5 s, and falls below half the setpoint at 78.6 s while the regulator keeps raising the ratio. The regulator's gain, the slope of the load's voltage against the ratio, is positive below √(Rₗ/R) and negative above it.

The regulator that pushes past the nose

A regulator that raises a ratio whenever its load's voltage is low is a stabiliser only while raising the ratio raises the voltage, and on a line that stops being true at exactly the nose: the load's voltage, n·V₀ times the load resistance over n²R plus that resistance, peaks at a turns ratio of the square root of the load over the line and falls beyond it. Ask the load for 90 per cent of the nose power and the regulator settles at n = 1.519 — unless it starts above n = 2.925, where the same setpoint is met on the wrong side of the peak, and then it collapses the voltage. Ask for 101 per cent and the voltage climbs to 9.950 volts, the most the line allows, and is below half its setpoint 256 seconds later. Near the nose the collapse takes a time that grows as the inverse square root of the excess: 2,521 seconds at a hundredth of a per cent.

power · Voltage regulation With Rₜₕ = 10 kΩ, a tenfold range of β moves the collector current by 17.3%. computed by solving, not by drawing. The collector current of a transistor biased from a 2 V Thévenin source through 1, 10 and 100 kΩ, with 4.7 kΩ in the collector, 1 kΩ in the emitter and a 12 V supply, against its current gain from 30 to 1000, each point a Newton solve of the netlist with both junctions in the device. Dotted: one resistor from the supply to the base, 876 kΩ, sized for the same current at β = 100; it is proportional to β until it saturates. With Rₜₕ = 10 kΩ the current moves by 17.3 per cent from β = 50 to 500.

The bias the gain does not set

A transistor's current gain varies tenfold across the parts one type number covers, and a bias network is judged by how little of that reaches the collector current. One resistor from the supply to the base passes all of it — 0.61 mA at β = 50, 1.16 at 100, and saturation from 200. The four-resistor network passes 98.5 per cent of a tenfold change with a 100 kΩ divider, 17.3 with 10 kΩ and 3.4 with 1 kΩ, and never less than the 1.78 per cent the ratio β/(β + 1) keeps however stiff the divider. Each tenfold cut in that spread costs a tenfold rise in the divider's standing current, so the design is a point on a hyperbola rather than a rule.

semiconductors · Operating point Three bias points below a coupling of 56.6 kΩ, one above — and the middle one is where Newton from nought lands. computed by solving, not by drawing. Two transistors, each with 1 kΩ to a 5 V supply and each biased from the other's collector through a coupling resistor into a 10 kΩ base resistor, solved by Newton on the netlist from six starting guesses and de-duplicated. Below a coupling of 56.6 kΩ there are three operating points: two latched, with one collector at 0.061 V and the other at 4.615 V at 10 kΩ, and a symmetric one at 1.702 V whose Jacobian determinant is negative, so the circuit cannot rest there. Above it the three merge into one symmetric point, and the circuit is an amplifier rather than a memory.

The circuit with three bias points

Two transistors, each biased from the other's collector, have three operating points: one collector at 0.061 V and the other at 4.615, the same the other way round, and both at 1.702. All three solve the circuit to a part in 10⁹, and Newton started from nought — where a simulator starts — finds the symmetric one, which is the one the circuit can never sit at: its Jacobian determinant is negative, so any positive capacitance at the nodes makes it run. Weaken the coupling past 56.6 kΩ and the three merge into one, the loop gain around the symmetric point having fallen through one. Which answer a solver returns depends on where it begins, and from 1,681 starting guesses at 10 kΩ, 437 return the one that is not a state.

semiconductors · Operating point At θ = 4 K/W the transistor holds at 311.7 K; the second crossing at 333 K runs away. computed by solving, not by drawing. The power a transistor dissipates against its junction temperature (solid), each point an electrical operating point solved at that temperature with the saturation current and thermal voltage it has there, for a transistor biased from a stiff 1 Ω Thévenin source to carry 100 mA from 15 V at 300 K with no emitter resistor; and the heat a sink of 4 K/W removes (dashed). Operating points are the crossings: 311.7 K with a thermal loop gain of 0.64 and 332.5 K with a thermal loop gain of 1.43. Above θ* = 4.43 K/W the two meet and vanish.

The bias point that heats itself

A transistor driven from a stiff base voltage to carry 100 mA from 15 V dissipates 1.5 W, and every kelvin that heats it raises the current it carries. On a 4 K/W heat sink the heat balance has two solutions — 311.7 K, which holds, and 332.5 K, which runs away — and above 4.43 K/W it has none. A tenth of an ohm in the emitter moves that edge to 7.69 K/W, and from a quarter of an ohm there is no edge below 520 K at all. The designer's estimate from the loop gain at room temperature puts the edge at 11.04 K/W, two and a half times too high, because the loop gain grows as the part warms.

semiconductors · Operating point Three trackers finding a panel's maximum power from open circuit, against the number of readings each takes. computed by solving, not by drawing: the single-diode panel of 81.0 W at 17.244 V, every tracker starting at 0.995 of the 19.85 V open-circuit voltage. Perturb-and-observe with 0.2 V steps walks down and then oscillates about the maximum, within two parts in a thousand of it from reading 39. Newton on I + V·dI/dV, two readings a step for the current and its slope, is within a part in a million from reading 10. The fractional open-circuit rule needs one reading and lands exactly, because its fraction, 0.8686, was taken at this light.

How many readings a maximum takes

A panel's maximum power sits where I + V·dI/dV is zero, and a tracker finds it by reading the panel. From open circuit, perturb-and-observe in 0.2 V steps takes 39 readings to come within two parts in a thousand and then oscillates about the maximum forever, giving up 7|P''|δ²/24 of it; Newton's method on the condition itself takes 10 readings to come within a part in a million, the digits doubling at each step. Newton converges only from a window: above 15.82 V on a panel whose maximum is at 17.24, because below it the condition is nearly the short-circuit current and nearly flat, and one step leaves the characteristic. And the one-reading rule — a fixed fraction of the open-circuit voltage — loses nothing at the light it was set at and 17 per cent at a fiftieth of it.

networks · Source model

Named alongside it

The objects these essays reach for when they reach for this one.

Model rangeNewton raphsonThermal voltageDesign tradeoffMaximum power transferSaturation currentCurrent mirrorDynamic resistanceIdeality factorMeasurement conditionBulk resistanceCompliance range

All concepts