Circuit Response
every model has an edge, and the figure carries it
Concept

Thermal runaway — where it appears

A dissipation that rises with temperature faster than the thermal resistance can carry it away, so that the fixed point T = Tₐ + RₜₕP(T) has no solution. Above the frequency or current where the crossing disappears the temperature is not a large number but an undefined one, which is why it is reported as a refusal rather than as the last iterate.

Named by 7 essays across 4 fields — each of them below, with the objects they name alongside it.

Nine tenths of the heat is in the switch, and above 1.28 MHz there is no temperature at all. computed by solving, not by drawing. The junction temperature a recovering diode settles at, against switching frequency, with the carrier lifetime rising as the 1.8 power of absolute temperature so that the recovery gets worse as the junction gets hotter. Each event costs 15.43 µJ when cold, of which 90% is dissipated in whatever is pulling the current down rather than in the diode: while the junction is still conducting it holds almost no voltage, and the recovered charge is delivered through the switch at the full 100 V. That energy equals the diode's own conduction loss at 29.2 kHz. The fixed point T = Ta + Rth·P(T) is iterated from the ambient upward; the junction passes its rated 150 °C at 904 kHz, and above 1.28 MHz there is no temperature that satisfies it at all — the loop has gain and the solver reports the refusal rather than the last iterate.

The heat a recovery leaves behind

The essay below this one measured how much current a diode conducts backwards and for how long, and stopped there. Both numbers are multiplied by a voltage somewhere, and the surprise is where: while the junction is still conducting it holds almost nothing, so nine tenths of the energy is dissipated in the transistor pulling the current down and not in the diode. Repeat it a hundred thousand times a second and it is 1.5 watts, the lifetime rises with temperature, and above 1.28 megahertz the diode's own loop has no fixed point at all.

transients · Reverse recovery Two loops on one heatsink give out at 135 kHz, and it is the switch that goes. computed by solving, not by drawing. The junction temperatures of the diode and the switch against switching frequency, with each device's own thermal resistance to a case they share. Each has a positive temperature loop and they are different loops — the diode's runs through its carrier lifetime and its recovery, the switch's through its on-resistance and its conduction — and the electrical coupling goes one way, since the charge the switch has to take at full supply is the diode's. The pair has no settled temperature above 135 kHz and the component that gives out is the switch, which has no exponential in it and is taking 84 per cent of the heat. The same two devices with the same total thermal resistance and no case in common survive to 485 kHz; the diode on its own to 1.28 MHz.

Two loops, and one heatsink

Nine tenths of a reverse recovery's energy is dissipated in the transistor and not in the diode, and the obvious calculation of the diode's junction temperature puts all of that energy in it anyway. Repaired, the diode alone survives to 1.28 megahertz instead of 128 kilohertz — a factor of exactly the ninety per cent. What replaces the number is the arrangement that exists: two devices with two different positive temperature loops on one piece of aluminium, giving out at 135 kilohertz, and it is the switch that goes.

transients · Reverse recovery The frequency at which a pulse train becomes an average. computed by solving, not by drawing. The same 5 watts of average dissipation at every frequency, delivered 2 per cent at a time. The flat line is the steady-state answer, which does not know about the frequency. The falling curve is the marched peak junction temperature, which does. They meet at 308 Hz, and that frequency is not a property of the converter: it is a fraction of one junction time constant per period — f·τ = 0.738 at this duty, with τ = 2.40 ms, and between 0.78 and 0.56 across the duties on the slider. A hundred-kilohertz converter fits 240 periods inside that time constant, and at the top of the sweep — 10.0 kHz — the steady state is already exact to 0.46 per cent, so the averaged-power fixed point is right and this is the measurement that says why. The march puts 48 steps inside each pulse, which is what the answer is sensitive to: at six it put the boundary 19 per cent too high.

The pulse the heatsink does not feel

A thermal resistance iterated to a fixed point with a diode or a switch is a statement about a power — so it assumes that a hundred and fifty watts for two per cent of the time is three watts. The die's own heat capacity decides whether that is true, and it decides it at a frequency: above 308 hertz the junction integrates, by a hundred kilohertz the fixed point is exact to five parts in ten thousand, and at one hertz the same average power on the same heatsink puts the junction three hundred kelvin hotter.

transients · Reverse recovery What one temperature costs the loop gain of a part that has a gradient. computed by solving, not by drawing. The thermal loop gain of a 30 mm core, solved as a body with its own internal temperature profile and again as a single lump at that profile's mean, against the Biot number. Both are negative, so the core is a stabilising feedback either way — but the body's loop is the more negative of the two at every point, by 3.0 per cent at a Biot number of 0.108 and 38 per cent at 10.8. A lumped calculation therefore understates how stable a wound part is, and the amount it understates by is not a property of the material but of how well the surface is cooled relative to how well the inside conducts. Below a Biot number of about a tenth it is worth under two per cent and the lump is the right model; at the cooled end the part has 7 kelvin inside it and half the feedback is invisible to a single temperature.

The loop gain one temperature understates

Every thermal loop gain this collection has computed was computed at a single temperature, because a lumped fixed point has only one — and the essay that measured the gradient inside a core recorded, without measuring it, that this makes each of those numbers a lower bound. It is a lower bound by three per cent where a ferrite usually sits and by thirty-eight per cent at the well-cooled end, always in the direction that makes the part safer than the calculation said. The obvious candidate for what decides it is refused: three geometries at one Biot number are 3.3 times apart.

power · Thermal feedback The temperature a part cannot come back from, and how long it takes to leave. computed by solving, not by drawing. The same fixed-point equation as the rung below, marched in time with a thermal capacitance rather than solved for its steady states: C dT/dt = P(T) − (T − T_a)/R_th, stepped adaptively on the temperature change because dT/dt goes through zero at each fixed point. Every trajectory starting below 191.1 °C returns to 88.8, however far above the operating point it began; every one starting above it leaves the material's range entirely, the closest in 0.2 minutes. The two nearest starts are 3.0 kelvin apart. The ignition temperature is a boundary in the STARTING CONDITION, and no steady-state analysis contains one.

The boundary that is a starting point

A wound part with a stable operating point at 88.8 degrees and an ignition temperature at 191.1 will never reach the second, because nothing takes it there. Marched in time rather than solved for its steady states, the same equation says what does: a trajectory starting at 189.6 degrees settles back and one starting at 192.6 leaves the material's range in twelve seconds — two starts three kelvin apart. And an overload of four times the normal loss is survivable for ever, while seven times is survivable for seventeen minutes.

magnetics · Thermal feedback At θ = 4 K/W the transistor holds at 311.7 K; the second crossing at 333 K runs away. computed by solving, not by drawing. The power a transistor dissipates against its junction temperature (solid), each point an electrical operating point solved at that temperature with the saturation current and thermal voltage it has there, for a transistor biased from a stiff 1 Ω Thévenin source to carry 100 mA from 15 V at 300 K with no emitter resistor; and the heat a sink of 4 K/W removes (dashed). Operating points are the crossings: 311.7 K with a thermal loop gain of 0.64 and 332.5 K with a thermal loop gain of 1.43. Above θ* = 4.43 K/W the two meet and vanish.

The bias point that heats itself

A transistor driven from a stiff base voltage to carry 100 mA from 15 V dissipates 1.5 W, and every kelvin that heats it raises the current it carries. On a 4 K/W heat sink the heat balance has two solutions — 311.7 K, which holds, and 332.5 K, which runs away — and above 4.43 K/W it has none. A tenth of an ohm in the emitter moves that edge to 7.69 K/W, and from a quarter of an ohm there is no edge below 520 K at all. The designer's estimate from the loop gain at room temperature puts the edge at 11.04 K/W, two and a half times too high, because the loop gain grows as the part warms.

semiconductors · Operating point A half-micron field-effect device's current against its gate voltage at 250, 300, 350 and 400 K, and the gate voltage at which they agree. computed by solving, not by drawing: mobility falling as T^−1.5, threshold falling 2 mV a kelvin, velocity saturation at 2 V. Below the crossing a warmer device draws more, because its threshold has fallen; above it less, because its mobility has. The curves agree at 1.7000 V, 1.0000 V of overdrive — the closed form's 2κT·vc/(1.5·vc − κT) — where 300 K draws 0.667 mA and 250 and 400 K draw 0.669 and 0.673 mA.

The overdrive at which temperature cancels

A field-effect device's current has two temperature coefficients pulling opposite ways: its threshold falls about two millivolts a kelvin, which raises the current, and its mobility falls as the temperature to the −1.5, which lowers it. They cancel at one overdrive, (4/3)κT = 0.800 V for a long channel, and the device's curves at every temperature cross there. Velocity saturation moves the crossing up — to 1.000 V at half a micron and 2.400 V at 0.15 µm — and, if the saturation velocity does not itself change with temperature, removes it altogether below a hundred nanometres. Below the zero a warmer device takes more current, the bipolar runaway in a device said to be free of it: 26 per cent more for 10 K at 0.1 V of overdrive.

semiconductors · Square law

Named alongside it

The objects these essays reach for when they reach for this one.

Design tradeoffModel rangeFixed pointReverse recoverySwitching lossTemperature coefficientThermal resistanceCarrier lifetimeLoop gainMarchingModel refusalVerification

All concepts