Circuit Response
every model has an edge, and the figure carries it
Concept

Band gap — where it appears

The energy separating a semiconductor's filled electron states from its empty ones, 1.12 electronvolts for silicon at room temperature. It sets how steeply every junction current rises with temperature: the saturation current carries the whole gap in its Boltzmann factor, and the generation current half of it.

Named by 2 essays across 2 fields — each of them below, with the objects they name alongside it.

A diode's drop from 250 to 400 K, at 1.00 mA. computed by solving, not by drawing. Thirty-one operating points, each Newton's method on the exponential at its own temperature. The drop falls at 1.828 mV/K measured against 1.830 mV/K from the closed form — falls, although the thermal voltage in the exponent rises, because the saturation current rises faster. Over the same range the slope per decade of current goes the other way, from 49.6 mV to 79.4 mV, because that one is Vₜ ln 10 and nothing else.

Two millivolts a kelvin, and the wrong sign

Every number in the semiconductor field was computed at 300 K, and the model had no temperature in it at all. Putting it in moves a diode's drop by 1.828 mV/K — downwards, although the thermal voltage in the exponent is rising, because the saturation current rises by nine orders of magnitude across the same range. Two temperature dependences of one device, of opposite sign, from one solve.

semiconductors · Temperature Two currents called saturation: one doubles every 4.49 K, the other every 8.98 K. computed by solving, not by drawing. The two current scales of one model junction against temperature, on a logarithmic axis. The saturation current of the exponential law goes as the square of the intrinsic carrier density — a cube of the temperature and the whole band gap in a Boltzmann factor — and doubles every 4.489 K at 300 K. The generation current a reverse-biased junction actually conducts goes as the density itself, with half the band gap, and doubles every 8.978 K: exactly twice as long, at every temperature. The dashed line is "doubles every ten kelvin" drawn through the generation scale, which is the current the rule belongs to. At 300 K this junction's two scales are 10 fA and 2 nA, which are its own parameters and not a property of silicon, and they become equal only at 616.8 K, or 343.6 °C.

Two currents with one name

A junction's saturation current is two currents with one name. The one in the forward law doubles every 4.49 kelvin; the one a reverse-biased junction actually conducts is generated in its depletion region, doubles every 8.98, and on this model junction is 3.06 × 10⁵ times larger at a volt of reverse bias. Doubles every ten kelvin is the second current's rule, and applied to the first it turns the forward drop's −1.81 millivolts per kelvin into +0.39.

limits · Diode model

Named alongside it

The objects these essays reach for when they reach for this one.

Model rangeOperating pointSaturation currentTemperature coefficientThermal voltageDynamic resistanceIdeality factorInput bias currentLeakage currentMeasurement condition

All concepts