Devices, and the amplitude they stop being linear at

The bias the gain does not set

A transistor's current gain varies tenfold across the parts one type number covers, and a bias network is judged by how little of that reaches the collector current. One resistor from the supply to the base passes all of it — 0.61 mA at β = 50, 1.16 at 100, and saturation from 200. The four-resistor network passes 98.5 per cent of a tenfold change with a 100 kΩ divider, 17.3 with 10 kΩ and 3.4 with 1 kΩ, and never less than the 1.78 per cent the ratio β/(β + 1) keeps however stiff the divider. Each tenfold cut in that spread costs a tenfold rise in the divider's standing current, so the design is a point on a hyperbola rather than a rule.

Assumes: A bias point is a solution, not a choice · How much of the amplifier gets through

A bias point is a solution made one argument about one diode: the operating point is not a number read off a characteristic but the root of a transcendental equation that the network and the device pose together, and a damped Newton iteration finds it in thirteen steps from a cold start. The diode was a convenience. It has one parameter worth arguing about — its saturation current — and that parameter enters through a logarithm, so the root barely moves when it does.

A transistor has a parameter that does not enter through a logarithm. Its current gain β multiplies the base current into the collector current, and it is the least controlled number on its data sheet: a general-purpose type is sold in gain groups because one type number, left ungrouped, spans several times over, and temperature, collector current and ageing each move it again. A tenfold range, fifty to five hundred, is the design case, and a bias network is judged by how much of that range arrives at the collector current. That is a question about a root, and it has to be answered by solving for the root at each end.

One resistor, and all of β

The simplest bias is one resistor from the supply to the base. The base current is then set by that resistor and the supply, nearly independent of the transistor, and the collector current is β times it. The resistor that gives the same current as the network below at β = 100 is 876 kΩ, found by bisection on the solved circuit, with 4.7 kΩ in the collector, 1 kΩ in the emitter and a 12 V supply.

With Rₜₕ = 10 kΩ, a tenfold range of β moves the collector current by 17.3%computed by solving, not by drawing. The collector current of a transistor biased from a 2 V Thévenin source through 1, 10 and 100 kΩ, with 4.7 kΩ in the collector, 1 kΩ in the emitter and a 12 V supply, against its current gain from 30 to 1000, each point a Newton solve of the netlist with both junctions in the device. Dotted: one resistor from the supply to the base, 876 kΩ, sized for the same current at β = 100; it is proportional to β until it saturates. With Rₜₕ = 10 kΩ the current moves by 17.3 per cent from β = 50 to 500.200m500m121001kcurrent gain βcollector current (milliamperes)designed at β = 100Rₜₕ 1 kΩRₜₕ 10 kΩRₜₕ 100 kΩdotted: one base resistorsupply, collector, emitter12 V · 4.7 kΩ · 1 kΩVₜₕ2 Vthis Rₜₕ10 kΩβ 50 → 500 moves Ic by17.3%one base resistor876 kΩ…saturates from β200solved, then checked — Newton on the netlist, both junctionsβ ×10 moves Ic 17.3% at Rₜₕ 10 kΩ
Fig. 1 Collector current against current gain from 30 to 1000, each point a Newton solve of the netlist with both of the transistor’s junctions in the model. Dotted: one base resistor of 876 kΩ. Solid lines: a 2 V Thévenin source through 1, 10 and 100 kΩ, which is what a divider from the supply presents; the heavy one is the resistance on the slider.

The single resistor’s line is nearly β itself, drawn on logarithmic axes: 0.609 mA at β = 50, 1.155 at 100, 1.646 at 150. At β = 200 it would want 2.1 mA, and 2.1 mA through 4.7 kΩ and 1 kΩ is 11.9 of the twelve volts. The collector falls until the collector junction is forward-biased and the transistor saturates: the collector–emitter voltage is 0.225 V at β = 200 and 0.132 V at 500, and the current stops at 2.08 mA because the resistors, not the transistor, now set it.

That is where the Ebers–Moll model earns its place in the solve. A model with only the forward junction would have reported 2.1 mA at β = 200 and 4.1 at 500, with the collector below the emitter, and nothing in the arithmetic would have objected. The four-junction model makes the saturated answer a root of the same equations, found by the same Newton loop — and every point drawn is checked by rebuilding Kirchhoff’s current law from the device laws at the solution, which closes to a part in 10⁹ at each one.

So a single base resistor is not a bias network in any useful sense. It fixes the base current, and a design whose collector current is β times a fixed number has handed its operating point to the part’s least controlled parameter.

The four-resistor network and the closed form

The textbook network puts a divider on the base and a resistor in the emitter. Reduced to its Thévenin equivalent — a source VTHV_{TH} behind RTHR_{TH} — the base loop gives the collector current directly:

IC=β (VTH−VBE)RTH+(β+1)REI_C = \frac{\beta\,(V_{TH} - V_{BE})}{R_{TH} + (\beta+1)R_E}

and each point on the solid lines is required to match it, to two parts in a thousand, with VBEV_{BE} taken from the solve at that point rather than assumed. The agreement is the check that the netlist is the network the formula describes; the only approximation in the formula is that VBEV_{BE} is a known number, which the solve replaces with the number it actually is — 0.7156 V at β = 50 and 0.7201 V at β = 500 on the 10 kΩ line, moving 4.5 mV because the current it carries moves.

The formula shows at once what the emitter resistor does. With RTHR_{TH} small against (β+1)RE(\beta + 1)R_E the collector current is nearly (VTH−VBE)/RE(V_{TH} - V_{BE})/R_E and β has left the expression. With RTHR_{TH} large it is nearly β(VTH−VBE)/RTH\beta(V_{TH} - V_{BE})/R_{TH}, which is the single base resistor again. The divider’s resistance decides which of the two circuits has been built.

divider β = 50 β = 100 β = 500 change, 50 → 500
1 kΩ 1.231 mA 1.255 mA 1.274 mA 3.4%
10 kΩ 1.053 mA 1.155 mA 1.252 mA 17.3%
100 kΩ 0.433 mA 0.645 mA 1.068 mA 98.5%

The change is measured as a fraction of the current at β = 100, the value the design was made for.

With Rₜₕ = 100 kΩ, a tenfold range of β moves the collector current by 98.5%. computed by solving, not by drawing. The collector current of a transistor biased from a 2 V Thévenin source through 1, 10 and 100 kΩ, with 4.7 kΩ in the collector, 1 kΩ in the emitter and a 12 V supply, against its current gain from 30 to 1000, each point a Newton solve of the netlist with both junctions in the device. Dotted: one resistor from the supply to the base, 876 kΩ, sized for the same current at β = 100; it is proportional to β until it saturates. With Rₜₕ = 100 kΩ the current moves by 98.5 per cent from β = 50 to 500.
Fig. 2 The same network with a 100 kΩ divider. The collector current more than doubles across the tenfold range of β, from 0.433 to 1.068 mA, because the divider’s resistance is comparable to the hundred kilohms that β reflects the emitter resistor as. It is a four-resistor network in its components and a single base resistor in its behaviour.

The same root, one device larger

It is worth seeing how little the method changed between the diode and the transistor, because the claim that an operating point is a solution is only useful if the solution keeps coming from the same place.

A diode fed from 5 V through 1.0 kΩ. computed by solving, not by drawing. The operating point is where the exponential meets the load line: 0.692544 V and 4.3075 mA, reached in 13 damped Newton steps from a cold start. The one-line Newton on Vs = v + R·i(v), which touches no matrix, gives 0.692544 V. The "drop" is not a constant: it moves 59.53 mV per decade of current, measured between two solved operating points.
Fig. 3 The diode that the argument began with: an exponential and a load line, crossing at a root that damped Newton reaches in a handful of steps, confirmed by a second Newton on the device alone. The transistor’s operating point above is the same computation with four exponentials instead of one, and the same check at the end of it.

The diode’s root is one exponential against one resistor. The transistor’s is four exponentials — two junction currents and two transport currents — against five resistors and two sources, and the loop that solves it is the same loop: each exponential replaced by its tangent at the present guess, the linear network solved, the guess moved by at most 0.15 V, repeated until nothing moves. The divider enters only as its Thévenin equivalent, which the source that is not a source shows is exact for a linear network at any load, so replacing the two divider resistors by one source and one resistor changes nothing in the root.

What the root then gives is more than the current. Every slope a small-signal analysis of this stage will use — the transconductance, the input resistance βre\beta r_e, the base current’s sensitivity — is a derivative at this solved point, and how small is small signal is how far from it those slopes can be trusted. A bias network that moves the point by seventeen per cent across the parts moves every one of those slopes by the same amount, which is the second reason the spread matters: it is the spread of the gain the stage will have, not only of the current it carries.

Why it is feedback, and what the ratio is

The emitter resistor is negative feedback on the collector current, and that description is worth making exact because it turns the table into a single number.

A rise in collector current raises the emitter voltage by RER_E times it. The base voltage is held by the divider — as far as the divider can hold it — so the base–emitter voltage falls, and the current falls back. How well the divider holds the base is the whole question: the base current flows through RTHR_{TH}, so a stiff divider holds and a soft one follows. The loop gain of that local feedback is the ratio of the resistance the emitter resistor presents at the base, (β+1)RE(\beta + 1)R_E, to the divider’s own, RTHR_{TH}. How much of the amplifier gets through measures the same arithmetic for an amplifier’s gain: a feedback loop passes a fraction 1/(1+T)1/(1 + T) of any change in the forward element, and β is the forward element here.

So the sensitivity to β is divided by one plus the stiffness ratio. With 10 kΩ against the 101 kΩ that β = 100 reflects, the ratio is about ten — five at β = 50 and fifty at 500, since β is inside it — and the spread falls as the ratio rises. With 1 kΩ the ratio is a hundred at the design point, and the base current’s share of the story is nearly gone.

What a resistor in the emitter buys makes the matching argument for the signal: the same resistor, unbypassed, linearises the stage by the same feedback. Here it is doing the job at direct current, and whether it also does it for the signal is a separate decision — the bypass capacitor that usually sits across it is what makes the two separable.

The floor no divider removes

A perfectly stiff divider — RTH=0R_{TH} = 0 — fixes the emitter current exactly, at (VTH−VBE)/RE(V_{TH} - V_{BE})/R_E. The collector current is then the fraction α=β/(β+1)\alpha = \beta/(\beta + 1) of it, and α still depends on β. From β = 50 to 500 it moves from 0.9804 to 0.9980, which is 1.78 per cent of its value at β = 100.

That is a floor. No choice of divider takes the spread below it, and the stiffest divider drawn — 300 Ω — sits just above it. It is small, and it is the reason a precision current source is not built from one transistor and a divider however stiff: the base current is part of the emitter current and not part of the collector’s, and nothing on the base side can know how large it is. The copy and its two errors meets the identical term in a current mirror, where it is the whole of one of the two errors.

With Rₜₕ = 1 kΩ, a tenfold range of β moves the collector current by 3.4%. computed by solving, not by drawing. The collector current of a transistor biased from a 2 V Thévenin source through 1, 10 and 100 kΩ, with 4.7 kΩ in the collector, 1 kΩ in the emitter and a 12 V supply, against its current gain from 30 to 1000, each point a Newton solve of the netlist with both junctions in the device. Dotted: one resistor from the supply to the base, 876 kΩ, sized for the same current at β = 100; it is proportional to β until it saturates. With Rₜₕ = 1 kΩ the current moves by 3.4 per cent from β = 50 to 500.
Fig. 4 A 1 kΩ divider: 1.231 to 1.274 mA across the tenfold range of β, a change of 3.4 per cent. About half of that is the α floor, which no divider removes, and half is the base current’s drop across the kilohm.

What a stiff divider costs

If the spread only fell as the divider stiffened, the design would be to make it as stiff as possible. It costs twice.

The divider’s own current. A divider that presents VTHV_{TH} behind RTHR_{TH} from a supply VCCV_{CC} draws VTH(VCC−VTH)/(RTHVCC)V_{TH}(V_{CC} - V_{TH})/(R_{TH}V_{CC}) from the supply whether or not the transistor is there — 167 µA at 10 kΩ and 1.67 mA at 1 kΩ, which is more than the collector current being biased. The standing current is in the supply’s budget and, in a battery circuit, in its lifetime.

The stage’s input resistance. The divider is across the input. With the emitter resistor bypassed for the signal, the stage’s input resistance is RTH∥βreR_{TH} \parallel \beta r_e, and at a milliampere βre\beta r_e is about 2.2 kΩ at β = 100. A 1 kΩ divider takes the input resistance to under 700 Ω, and whatever drives the stage now sees a load the transistor had nothing to do with — the divider and its load is the same arithmetic from the driving side.

Every tenfold cut in the β spread costs a tenfold rise in the divider's current. computed by solving, not by drawing. Against the divider's Thévenin resistance: the change in collector current from β = 50 to 500 as a fraction of the current at β = 100 (solid); the divider's standing current as a fraction of the collector current (dashed); and the stage's input resistance with the emitter bypassed, Rₜₕ ∥ βrₑ, as a fraction of βrₑ alone (dotted). At the rule of thumb Rₜₕ = βₘᵢₙ·Rₑ/10 = 5 kΩ the current moves 10.5 per cent across the tenfold range of β; the divider's current falls below the spread from 9.7 kΩ.
Fig. 5 Against the divider’s Thévenin resistance: the collector current’s change from β = 50 to 500 as a fraction of its value at 100 (solid), the divider’s standing current as a fraction of the collector current (dashed), and the stage’s input resistance with the emitter bypassed as a fraction of βre\beta r_e (dotted). The horizontal line is the floor α sets; the vertical is the rule of thumb RTH=βminRE/10R_{TH} = \beta_\mathrm{min}R_E/10.

The solid and dashed lines are close to mirror images across the middle of the range, and that is the finding. Well above the floor the spread is proportional to RTHR_{TH} and the standing current to 1/RTH1/R_{TH}, so their product is fixed by the emitter resistor, the supply and the range of β, and not by the divider at all. A bias design is a point on a hyperbola, and the choice between a stable current and a cheap divider is a choice of where on it to sit. The two are equal — the spread and the standing current as a fraction of the collector current — at 9.7 kΩ.

The rule of thumb, RTH=βminRE/10R_{TH} = \beta_\mathrm{min}R_E/10, is 5 kΩ here. It gives a spread of 10.5 per cent across the tenfold range of β and a standing current of 333 µA, 28 per cent of the collector current. That is a reasonable point on the hyperbola, and the figure is what says that it is a point — a factor of ten in either direction is available at the price the other line names.

What changes the hyperbola rather than the point

Two things move the curve itself, and both are in the circuit rather than in the divider.

A larger emitter resistor. The stiffness ratio is (β+1)RE/RTH(\beta + 1)R_E/R_{TH}, so doubling RER_E doubles it at the same divider — but RER_E takes headroom. At 1.2 mA a kilohm drops 1.2 V of the twelve, and the collector’s swing is what is left between the supply, the collector resistor’s drop and the emitter. A higher VTHV_{TH} with a proportionally larger RER_E is the same trade: it also reduces the share of VBEV_{BE} in the numerator, which matters more for temperature than for β.

A narrower β range. Buying the part in a gain group narrows fifty-to-five-hundred to something like two-to-one, and the spread at every divider falls in proportion. That is a procurement decision standing in for a circuit one, and it is common because it costs nothing in the circuit.

The one thing that does not move the hyperbola is the divider, because the divider is the variable along it.

What the other variables do at the same point

The table holds everything but β fixed, and it is worth saying how large the other effects are beside it, since a designer spends the stiffness once and it has to cover all of them.

VBEV_{BE} with current moves 4.5 mV across the β range on the 10 kΩ line, and against VTH−VBE≈1.28V_{TH} - V_{BE} \approx 1.28 V that is a third of a per cent of the current. Small, and already inside the table, because the solve includes it.

VBEV_{BE} with temperature moves by about two millivolts a kelvin, which two millivolts a kelvin, and the wrong sign measures — over a hundred kelvin that is 200 mV, or sixteen per cent of the same 1.28 V. It is the larger effect by far, and a divider does nothing for it: only the size of VTH−VBEV_{TH} - V_{BE} does, which is the argument for a larger RER_E rather than a stiffer divider.

Resistor tolerance sets the current through (VTH−VBE)/RE(V_{TH} - V_{BE})/R_E directly, so a one-per-cent RER_E is a one-per-cent current, independent of the network’s stiffness. The error that is a distribution is how several such contributions combine: as a sum of variances, so the largest dominates.

So the stiffness buys protection against β and nothing else, and at the rule-of-thumb point it has already reduced β’s contribution below temperature’s. Stiffening past that point buys very little that matters.

How the solves were made

Every point is a Newton solve of the netlist, with the transistor as Ebers–Moll’s four elements — two junction diodes and two transport currents — and a start at a base–emitter voltage of 0.6 V with the collector junction reverse-biased, so that the loop begins on the forward-active side and moves into saturation only if the circuit takes it there.

Each solve is checked two ways. Kirchhoff’s current law is rebuilt from the nonlinear laws at the solution, and closes to better than a part in 10⁹ at every point; and on the four-resistor network the solved current is required to equal the closed form with the solved VBEV_{BE}, to two parts in a thousand.

The single base resistor is sized by bisection on the solved circuit, to the four-resistor network’s own current at β = 100 with a 10 kΩ divider, so that the two circuits are compared at the design point rather than at a formula’s idea of it. The single resistor is required to saturate within the range drawn, and it does from β = 200.

The floor is required: the stiffest divider must leave a spread at or above the α floor and within half again of it.

What varying β alone cannot show

β is the only thing varied. Real gain rises with collector current up to a peak and falls beyond it, and rises with temperature, so a tenfold range at one current is a different range at another. The figures fix the current’s neighbourhood and vary the number.

The Early effect is absent. A collector–emitter voltage that moves with β changes the current slightly through the output conductance; at these voltages it is a fraction of a per cent and it would slightly soften the single resistor’s saturation corner.

And the temperature is fixed, which the next section names as the larger effect and which the operating point meets in its own right when the transistor dissipates enough to warm itself.

Still open: the second root, the self-heating, and the bias that tracks

A network with more than one answer. Every circuit here has exactly one operating point, and Newton finds it from any reasonable start. A circuit with positive feedback — two transistors each biased from the other’s collector — has several, and which one a solver returns depends on where it starts. That is the case in which the operating point stops being a property of the circuit and becomes a property of its history.

The operating point that sets its own temperature. A transistor dissipating a watt is tens of kelvin above its surroundings, and its VBEV_{BE} has moved by two millivolts for each; the current then depends on a temperature that depends on the current. The emitter resistor is the feedback against that too, and whether it is enough is a solve of the electrical and thermal equations together.

A bias that follows β instead of fighting it. A current mirror sets a transistor’s base from another transistor of the same type carrying a known current, so a high-gain part is biased by a high-gain reference. The spread then depends on how well the two parts’ β match rather than on how large either is, which moves the whole argument from the range of β to its tracking.

Part 2 on operating point

One argument about Operating point, and one of 4 essays on it so far, each part numbered by how much of the idea it assumes. What sits either side of it:

What links here

Essays that reach for this one mid-argument — the half of a link its own author cannot write down.

The objects named here

The third axis, after the field and the idea: the things themselves, and every essay that touches each one.

Current gainDesign tradeoffNegative feedbackNewton raphsonOperating pointSaturationThevenin equivalentVoltage divider